journal article·2014-01-22

Air Heating Approach for Multilayer Etching and Roll-to-Roll Transfer of Silicon Nanowire Arrays as SERS Substrates for High Sensitivity Molecule Detection

Yan Wang, Xiujuan Zhang, Peng Gao, Zhibin Shao, Xiwei Zhang, Yuanyan Han, Jiansheng Jie

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Abstract

SiNW array represents an attractive system for construction of high-performance energy, electronic, and sensor devices. To meet the demand for flexible devices as well as address the concern about the full use of the Si material, large-area transfer of the SiNW array from growth substrate is very desirable. Here, we report a simple air heating approach to achieve the multilayer etched SiNW array. This method allows the fabrication of up to a five-layer (while perfectly three-layer) cracked SiNW array on single-crystalline Si wafer via a templateless metal-assisted etching approach. Fractures could happen at the crack position when an appropriate pressure was applied on the SiNW array, facilitating the wafer-scale layer-by-layer transfer of the SiNW array onto a flexible substrate through a low-cost and time-efficient roll-to-roll (R2R) technique. Further releasing of the SiNW array to other receiving substrates was accomplished with the aid of a thermal release tape. After modification with sliver nanoparticles (AgNPs), the flexible SiNW array showed great potential as a high-sensitivity surface-enhanced Raman spectroscopy (SERS) substrate for detecting rhodamine 6G (R6G) molecule with concentration as low as 10(-9) M.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Functional Nano & Soft Materials (FUNSOM) & Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China

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