DataVXACS Applied Materials & InterfacesPaper
journal article·2015-08-05

Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage

Gang Yang, Yong-Feng Li, Bin Yao, Zhan-Hui Ding, Rui Deng, Xuan Fang, Zhi-Peng Wei

ACS Applied Materials & Interfaces· Volume 7· Issue 30
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Source abstract

Abstract

We report alternative visible and ultraviolet light response spectra in a p-Cu2ZnSnS4 (p-CZTS)/n-GaN heterojunction photodiode. A CZTS film was deposited on an n-GaN/sapphire substrate using a magnetron sputtering method. Current-voltage characteristic of the p-CZTS/n-GaN heterojunction photodiode showed a good rectifying behavior. The spectral response measurements indicate that the response wavelength of the photodiode can be tuned from ultraviolet to visible regions via applying zero and reverse bias. A band alignment at the interface of the p-CZTS/n-GaN heterojunction was proposed to interpret the spectral response of the device.
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Research context

OpenAlex topics: Antenna Design and Optimization · Advanced Antenna and Metasurface Technologies · Antenna Design and Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Lab of Superhard Materials and College of Physics, Jilin University, Changchun 130012, People’s Republic of China

Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China

School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China

State Key Laboratory on High-Power Semiconductor Lasers, Changchun University of Science and Technology, 7186 Wei-Xing Road, Changchun 130022, China

Funding

National Natural Science Foundation of China · Ministry of Education of the People's Republic of China · Natural Science Foundation of Jilin Province

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