DataVXACS Applied Materials & InterfacesPaper
journal article·2021-02-10

Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor

Chaehyeon Ahn, Younghee Park, Seunghyun Shin, Jong-Guk Ahn, Intek Song, Youngjoon An, Jaehoon Jung, Chung Soo Kim, Jee Hyeon Kim, Jiwon Bang, Daehyun Kim, Jaeyoon Baik, Hyunseob Lim

ACS Applied Materials & Interfaces· Volume 13· Issue 5
Publisher page
Source abstract

Abstract

We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea

Department of Applied Chemistry, Andong National University, 1375 Gyeongdong-ro, Andong, Gyeongsangbuk-do 36729, Republic of Korea

Department of Chemistry, University of Ulsan, 12 Technosaneop-ro 55-gil, Nam-gu, Ulsan 44776, Republic of Korea

Korea Institute of Ceramic Engineering and Technology, 101 Soho-ro, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea

Department of Bio-Nano Chemistry, Wonkwang University, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea

Pohang Accelerator Laboratory, 80 Jigok-ro 127 beon-gil, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea

Funding

National Research Foundation of Korea · Gwangju Institute of Science and Technology

References (46)

Show source-provided references
1. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
2. 10.1021/nn100393710.1021/nn1003937 ↗
3. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
4. 10.1038/nchem.158910.1038/nchem.1589 ↗
5. 10.1103/PhysRevB.93.04142010.1103/PhysRevB.93.041420 ↗
6. 10.1021/nn405938z10.1021/nn405938z ↗
7. 10.1021/ja401348510.1021/ja4013485 ↗
8. 10.1021/jacs.5b1051910.1021/jacs.5b10519 ↗
9. 10.1021/acsnano.5b0504010.1021/acsnano.5b05040 ↗
10. 10.1021/nl903868w10.1021/nl903868w ↗
11. 10.1002/smll.20110265410.1002/smll.201102654 ↗
12. 10.1038/nmat367310.1038/nmat3673 ↗
13. 10.1021/nl201874w10.1021/nl201874w ↗
14. 10.1002/adma.20110479810.1002/adma.201104798 ↗
15. 10.1038/srep0186610.1038/srep01866 ↗
16. 10.1021/acsnano.5b0791610.1021/acsnano.5b07916 ↗
17. 10.1021/cm502566210.1021/cm5025662 ↗
18. 10.1021/nl204361210.1021/nl2043612 ↗
19. 10.1039/C1NR10803D10.1039/C1NR10803D ↗
20. 10.1073/pnas.160598211310.1073/pnas.1605982113 ↗
21. 10.1038/nature1441710.1038/nature14417 ↗
22. 10.1016/j.jcrysgro.2019.01.02010.1016/j.jcrysgro.2019.01.020 ↗
23. 10.1088/1361-6528/aa695810.1088/1361-6528/aa6958 ↗
24. 10.1021/acs.chemmater.7b0136710.1021/acs.chemmater.7b01367 ↗
25. 10.1002/admi.20180014010.1002/admi.201800140 ↗
26. 10.1002/anie.20130947410.1002/anie.201309474 ↗
27. 10.1088/1361-6528/aa8f1510.1088/1361-6528/aa8f15 ↗
28. 10.1021/acs.cgd.7b0148610.1021/acs.cgd.7b01486 ↗
29. 10.1038/s41699-017-0010-x10.1038/s41699-017-0010-x ↗
30. 10.1103/PhysRevB.23.504810.1103/PhysRevB.23.5048 ↗
31. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
32. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
33. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
34. 10.1063/1.338234410.1063/1.3382344 ↗
35. 10.1038/s41586-018-0008-310.1038/s41586-018-0008-3 ↗
36. 10.1038/am.2017.22610.1038/am.2017.226 ↗
37. 10.1021/nn100393710.1021/nn1003937 ↗
38. 10.1088/0957-4484/27/11/11570510.1088/0957-4484/27/11/115705 ↗
39. 10.1021/nl302584w10.1021/nl302584w ↗
40. 10.1016/j.ssc.2012.02.00510.1016/j.ssc.2012.02.005 ↗
41. 10.1103/PhysRevB.89.12540610.1103/PhysRevB.89.125406 ↗
42. 10.1039/c2nr31833d10.1039/c2nr31833d ↗
43. 10.1021/acs.nanolett.7b0251310.1021/acs.nanolett.7b02513 ↗
44. 10.1038/nmat363310.1038/nmat3633 ↗
45. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
46. 10.1021/nn507328610.1021/nn5073286 ↗