Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ
Source abstract
Abstract
We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼10(13) cm(-2) of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 10(12) cm(-2)), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · Fullerene Chemistry and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Astronomy and Monash Centre for Atomically Thin Materials, Clayton Victoria 3800, Australia
Department of Imaging and Applied Physics, Curtin University, Bentley, Western Australia 6102, Australia
Australian Synchrotron, 700 Blackburn Road, Clayton, Victoria 3168, Australia
Funding
Australian Research Council
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