Electric Field Manipulated Multilevel Magnetic States Storage in FePt/(011) PMN-PT Heterostructure

In the current information society, the realization of a magnetic storage technique with energy-efficient design and high storage density is greatly desirable. Here, we demonstrate that, without bias magnetic field, different values of remanent magnetization ( M r ) can be obtained in a FePt/0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 (PMN-PT) heterostructure by applying a unipolar electric field across the substrate. These multilevel magnetic signals can serve as writing data bits in a storage device, which remarkably increases the storage density. As for the data reading, these multilevel M r values can be read nondestructively and distinguishably using a commercial giant magnetoresistance magnetic sensor by converting the magnetic signal to voltage signal. Furthermore, these multilevel voltage signals show good retention and switching property, which enables promising applications in electric-writing magnetic-reading memory devices with low power consumption and high storage density.