Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface
Abstract
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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Affiliations
Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States
Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, Centre National de la Recherche Scientifique (CNRS), 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology, Engesserstraße 18/20, 76128 Karlsruhe, Germany
Funding
Helmholtz Association