DataVXACS Applied Materials & InterfacesPaper
journal article·2020-07-29

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

Jose Recatala-Gomez, Hong Kuan Ng, Pawan Kumar, Ady Suwardi, Minrui Zheng, Mohamed Asbahi, Sudhiranjan Tripathy, Iris Nandhakumar, Mohammad S. M. Saifullah, Kedar Hippalgaonkar

ACS Applied Materials & Interfaces· Volume 12· Issue 30
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Source abstract

Abstract

Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m–1 and a Seebeck coefficient of −21.41 μV K–1 for a directly patterned, substoichiometric Bi2S3 thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.
Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Republic of Singapore

Department of Chemistry, University of Southampton, University Road, Highfield, Southampton SO17 1BJ, United Kingdom

Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117551, Republic of Singapore

Department of Electrical and Computer Engineering, Faculty of Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore

School of Material Science and Engineering, Nanyang Technological University, Block N4.1, 50 Nanyang Avenue, Singapore 639798, Republic of Singapore

Funding

Agency for Science, Technology and Research

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