journal article·2019-08-28

Covalently Bonded Pillared Layered Bromoplumbate with High Thermal Stability: High Capacitance Gain after Photoinduced Electron Transfer

Cai Sun, Ming-Sheng Wang, Guo-Cong Guo

ACS Applied Materials & Interfaces· Volume 11· Issue 34
Publisher page

Abstract

Improving the stability and photoelectric properties are current aims in the field of inorganic–organic hybrid lead halides. In this work, a new covalently bonded pillared layered bromoplumbate, [Pb3Br6(CV)]n, was prepared using a photoactive zwitterion viologen, N,N′-4,4′-bipyridiniodipropionate (CV), as a ligand. It has a high thermal stability in air and shows a remarkable increase of capacitance after photoinduced electron transfer (PIET). The observed dielectric switch ratio of ∼689% at 3 kHz exceeded all reported values at room temperature for switchable dielectric materials. The capacitance gain was derived from the redistribution of electrons after PIET from the lead-halide layer to organic π-aggregates, so that the activation energy of hopping polarizability was significantly reduced.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People’s Republic of China

Funding

China Postdoctoral Science Foundation · Natural Science Foundation of Fujian Province · Ministry of Human Resources and Social Security · National Natural Science Foundation of China · Chinese Academy of Sciences

References (36)

Show source-provided references
1. Mitzi, D. B. Progress in Inorganic Chemistry; Karlin, K. D., Ed. 1999; Vol. 48, pp 1–121.
2. 10.1126/science.286.5441.94510.1126/science.286.5441.945 ↗
3. 10.1038/nphoton.2017.4310.1038/nphoton.2017.43 ↗
4. 10.1126/science.aad181810.1126/science.aad1818 ↗
5. 10.1021/ja809598r10.1021/ja809598r ↗
6. 10.1126/science.aah404610.1126/science.aah4046 ↗
7. 10.1038/nature1413310.1038/nature14133 ↗
8. 10.1021/ja411045r10.1021/ja411045r ↗
9. 10.1002/anie.20170282510.1002/anie.201702825 ↗
10. 10.1021/jacs.8b0773110.1021/jacs.8b07731 ↗
11. 10.1021/jacs.7b1010110.1021/jacs.7b10101 ↗
12. 10.1021/jacs.5b0330110.1021/jacs.5b03301 ↗
13. 10.1021/ja401942910.1021/ja4019429 ↗
14. 10.1021/nl304555310.1021/nl3045553 ↗
15. 10.1021/ar400226210.1021/ar4002262 ↗
16. Kao K. C. · 2004
17. 10.1351/pac20017304063910.1351/pac200173040639 ↗
18. 10.1021/ja407755610.1021/ja4077556 ↗
19. 10.1002/anie.20141100510.1002/anie.201411005 ↗
20. 10.1002/anie.20100120810.1002/anie.201001208 ↗
21. 10.1103/PhysRevLett.92.25720110.1103/PhysRevLett.92.257201 ↗
22. 10.1103/PhysRevLett.93.10720710.1103/PhysRevLett.93.107207 ↗
23. 10.1002/anie.20050325210.1002/anie.200503252 ↗
24. 10.1007/s10847-015-0524-910.1007/s10847-015-0524-9 ↗
25. Siemens. SHELXTLTM Version 5 Reference Manual. Madison, Wisconsin, 1994.
26. 10.1103/PhysRevB.54.1653310.1103/PhysRevB.54.16533 ↗
27. 10.1002/jcc.2105710.1002/jcc.21057 ↗
28. 10.1088/0953-8984/22/2/02220110.1088/0953-8984/22/2/022201 ↗
29. 10.1103/PhysRevB.83.19513110.1103/PhysRevB.83.195131 ↗
30. 10.1107/S002188980801201610.1107/S0021889808012016 ↗
31. 10.1038/358656a010.1038/358656a0 ↗
32. 10.1002/anie.20180258010.1002/anie.201802580 ↗
33. 10.1002/advs.20150002910.1002/advs.201500029 ↗
34. 10.1002/adma.20170251210.1002/adma.201702512 ↗
35. 10.1016/j.jpcs.2015.08.02110.1016/j.jpcs.2015.08.021 ↗
36. Grosso, G.; Parravicini, G. P. Solid State Physics, 2nd ed. Grosso, G.; Parravicini, G. P., Eds. Academic Press: Amsterdam, 2014; pp 577–608.10.1016/B978-0-12-385030-0.00013-X ↗