journal article·2019-01-16

Enhancing Capacitance of Nickel Cobalt Chalcogenide via Interface Structural Design

Fei Lu, Min Zhou, Kun Su, Tao Ye, Yijun Yang, Tran Dai Lam, Yoshio Bando, Xi Wang

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Abstract

Spinel NiCo2X4 (X = O or S), comprising two geometrical cobalt ions, Co2+ in the tetrahedral site (Co2+Td) and Co3+ in the octahedral site (Co3+Oh), has been widely evaluated as a promising pseudocapacitor electrode material. Previous literature mainly demonstrated that much higher specific capacitance of NiCo2S4 than that of NiCo2O4 was ascribed to the higher electronic conductivity. However, we argue that only a small amount of capacitance can be induced by the electronic conductivity, while the significance of electrochemical active species in these system has long been ignored. Here, we propose that geometrical-site-dependent pseudocapacitive activity will generate enhanced specific capacitance through the interface structural design. It reveals that specific capacitance of NiCo2S4 (1862 F g–1 at 4 A g–1) is 50% higher than that of NiCo2O4 (1230 F g–1 at 4 A g–1), which is derived from the designed increase of Co2+Td ions (cobalt ions in the tetrahedral site) in NiCo2S4. These results have significant implications for the design and optimization of the electrochemical properties of transition-metal-based pseudocapacitors.
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Research context

OpenAlex topics: Advancements in Battery Materials · Electrocatalysts for Energy Conversion · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Luminescence and Optical Information, Ministry of Education, Department of Physics, School of Science, Beijing Jiaotong University, Beijing 100044, P. R. China

College of Physical Science and Technology, Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002, P. R. China

Baotou Medical College, Inner Mongolia 014000, P. R. China

Institute of Tropical Technology, Graduate University of Science and Technology, Vietnam Academy of of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Viet Nam

Tianjin Key Laboratory of Molecular Optoelectronic Sciences, School of Chemical Engineering and Technology, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, P. R. China

International Center for Young Scientists (ICYS) & International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

Funding

Ministry of Education of the People's Republic of China · Beijing Jiaotong University · Central Committee of the Communist Party of China

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