journal article·2018-09-19Open access

Analysis of the Bias-Dependent Split Emission Zone in Phosphorescent OLEDs

Markus Regnat, Kurt P. Pernstich, Simon Züfle, Beat Ruhstaller

ACS Applied Materials & Interfaces· Volume 10· Issue 37

Abstract

From s-polarized, angle-dependent measurements of the electroluminescence spectra in a three-layer phosphorescent organic light-emitting diode, we calculate the exciton distribution inside the 35 nm thick emission layer. The shape of the exciton profile changes with the applied bias due to differing field dependencies of the electron and hole mobilities. A split emission zone with high exciton densities at both sides of the emission layer is obtained, which is explained by the presence of energy barriers and similar electron and hole mobilities. A peak in the transient electroluminescence signal after turn-off and the application of a reverse bias is identified as a signature of a split emission zone.
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Research context

OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Computational Physics, Zurich University of Applied Sciences (ZHAW), Technikumstrasse 9, 8400 Winterthur, Switzerland

Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, EPFL, Station 12, 1015 Lausanne, Switzerland

Fluxim AG, Katharina-Sulzer-Platz 2, 8400 Winterthur, Switzerland

Funding

Samsung · Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

References (48)

Show source-provided references
1. 10.1038/ncomms576910.1038/ncomms5769 ↗
2. 10.1002/adma.20130573310.1002/adma.201305733 ↗
3. 10.1002/adfm.20130054710.1002/adfm.201300547 ↗
4. 10.1143/JJAP.46.L1010.1143/JJAP.46.L10 ↗
5. 10.1002/adma.20140162110.1002/adma.201401621 ↗
6. 10.7567/JJAP.52.11000110.7567/JJAP.52.110001 ↗
7. 10.1002/adma.20130160310.1002/adma.201301603 ↗
8. 10.1002/adfm.20130010110.1002/adfm.201300101 ↗
9. 10.1016/j.jiec.2015.09.01110.1016/j.jiec.2015.09.011 ↗
10. 10.1021/acs.jpcc.7b1103910.1021/acs.jpcc.7b11039 ↗
11. 10.1109/JSTQE.2003.81885210.1109/JSTQE.2003.818852 ↗
12. 10.1002/adom.20160006710.1002/adom.201600067 ↗
13. 10.1021/acsami.6b1029710.1021/acsami.6b10297 ↗
14. 10.1063/1.36247510.1063/1.362475 ↗
15. 10.1016/j.phpro.2011.05.04310.1016/j.phpro.2011.05.043 ↗
16. 10.1038/ncomms600810.1038/ncomms6008 ↗
17. 10.1016/S0379-6779(02)01269-910.1016/S0379-6779(02)01269-9 ↗
18. 10.1063/1.489753410.1063/1.4897534 ↗
19. 10.1038/nmat362210.1038/nmat3622 ↗
20. 10.1016/j.orgel.2012.05.05310.1016/j.orgel.2012.05.053 ↗
21. Perucco, B.; Reinke, N. A.; Müller, F.; Rezzonico, D.; Ruhstaller, B. In The Influence of the Optical Environment on the Shape of the Emission Profile and Methods of Its Determination, Proceedings of SPIE, 2010; Vol. 7722, p 77220F1.10.1117/12.853989 ↗
22. Ruhstaller B. · 2011
23. 10.1063/1.494745710.1063/1.4947457 ↗
24. 10.1038/nphoton.2010.3210.1038/nphoton.2010.32 ↗
25. 10.1364/OE.18.00A24610.1364/OE.18.00A246 ↗
26. 10.1016/j.orgel.2010.03.00210.1016/j.orgel.2010.03.002 ↗
27. 10.1364/OL.37.00413410.1364/OL.37.004134 ↗
28. 10.1016/j.orgel.2017.02.00610.1016/j.orgel.2017.02.006 ↗
29. 10.1063/1.365644310.1063/1.3656443 ↗
30. 10.1117/12.87467810.1117/12.874678 ↗
31. 10.1016/j.orgel.2010.09.01910.1016/j.orgel.2010.09.019 ↗
32. 10.1002/adfm.20140253210.1002/adfm.201402532 ↗
33. 10.1063/1.352708510.1063/1.3527085 ↗
34. 10.1002/pssb.20074344710.1002/pssb.200743447 ↗
35. 10.1063/1.308986710.1063/1.3089867 ↗
36. 10.1088/2053-1591/aacec610.1088/2053-1591/aacec6 ↗
37. Parshin, M. A.; Ollevier, J.; Van der Auweraer, M. Charge Carrier Mobility in CBP Films Doped with Ir(ppy)3. Proceedings of SPIE, 2006; Vol. 6192, p 61922A.10.1117/12.663553 ↗
38. 10.1080/1542140039026416210.1080/15421400390264162 ↗
39. 10.1103/PhysRevB.75.12532810.1103/PhysRevB.75.125328 ↗
40. 10.1063/1.280574010.1063/1.2805740 ↗
41. Yamazaki, S.; Tsutsui, T. Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to Displays; John Wiley & Sons, 2017; p 252.10.1002/9781119247395 ↗
42. Fluxim. Platform for All-in-One Characterization of Solar Cells and OLEDs, software version Paios 3.3. https://www.fluxim.com.
43. Fluxim. Setfos, version 4.6. https://www.fluxim.com.
44. 10.1021/acsphotonics.8b0004710.1021/acsphotonics.8b00047 ↗
45. 10.1063/1.477318810.1063/1.4773188 ↗
46. 10.1103/PhysRevB.66.23532110.1103/PhysRevB.66.235321 ↗
47. 10.1103/PhysRevApplied.3.02400810.1103/PhysRevApplied.3.024008 ↗
48. 10.1002/adma.20130477910.1002/adma.201304779 ↗