journal article·2018-08-15Open access

Defect-Induced Exchange Bias in a Single SrRuO3 Layer

Changan Wang, Chao Chen, Ching-Hao Chang, Hsu-Sheng Tsai, Parul Pandey, Chi Xu, Roman Böttger, Deyang Chen, Yu-Jia Zeng, Xingsen Gao, Manfred Helm, Shengqiang Zhou

ACS Applied Materials & Interfaces· Volume 10· Issue 32

Abstract

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal–insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Advanced Condensed Matter Physics · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany

Technische Universität Dresden, D-01062 Dresden, Germany

Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, 518060 Shenzhen, China

Leibniz-Institute for Solid State and Materials Research, Helmholtzstrasse 20, 01069 Dresden, Germany

Funding

Deutsche Forschungsgemeinschaft · China Scholarship Council · National Natural Science Foundation of China · Ministry of Science and Technology, Taiwan · Shenzhen Municipality

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