DataVXACS Applied Materials & InterfacesPaper
journal article·2017-11-22Open access

Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

Fei Hui, Wenjing Fang, Wei Sun Leong, Tewa Kpulun, Haozhe Wang, Hui Ying Yang, Marco A. Villena, Gary Harris, Jing Kong, Mario Lanza

ACS Applied Materials & Interfaces· Volume 9· Issue 46
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Source abstract

Abstract

Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.
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Research context

Materials processing

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Advancements in Semiconductor Devices and Circuit Design

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Affiliations

Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Pillar of Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore

Department of Electrical and Computer Engineering, Howard University, Washington, D.C. 20059, United States

Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Massachusetts Institute of Technology · Government of Jiangsu Province · Ministry of Finance · National Natural Science Foundation of China · Division of Materials Research · Collaborative Innovation Center of Suzhou Nano Science and Technology · Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University · Priority Academic Program Development of Jiangsu Higher Education Institutions · Key Laboratory of Microelectronic Devices and Integrated Technology

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