DataVXACS Applied Materials & InterfacesPaper
journal article·2022-01-19

Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride

Hongwei Liu, Noah Mendelson, Irfan H. Abidi, Shaobo Li, Zhenjing Liu, Yuting Cai, Kenan Zhang, Jiawen You, Mohsen Tamtaji, Hoilun Wong, Yao Ding, Guojie Chen, Igor Aharonovich, Zhengtang Luo

ACS Applied Materials & Interfaces· Volume 14· Issue 2
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Source abstract

Abstract

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B–C bonds and 1.6-fold for N–C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced two-dimensional (2D) quantum state engineering.
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Research context

Materials processing

OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China

School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia

Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States

Centre for Advanced 2D Materials, National University of Singapore, 117542 Singapore

School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China

Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, Foshan University, Foshan 528225, P. R. China

School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, P. R. China

ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia

Funding

Guangdong Science and Technology Department · Australian Research Council · Natural Science Foundation of Hubei Province · Asian Office of Aerospace Research and Development · ?International science and technology cooperation projects? of Science and Technological Bureau of Guangzhou Huangpu District · Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology · Shenzhen Special Fund for Central Funds Guiding the Local Science and Technology Development · Natural Science Foundation of China · the IER foundation · NSFC-RGC Joint Research Scheme · Guangdong Province Key Laboratory of Semiconductor Micro Display

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