journal article·2021-08-18Open access

Electrically Enhanced Exchange Bias via Solid-State Magneto-ionics

Peyton D. Murray, Christopher J. Jensen, Alberto Quintana, Junwei Zhang, Xixiang Zhang, Alexander J. Grutter, Brian J. Kirby, Kai Liu

ACS Applied Materials & Interfaces· Volume 13· Issue 32

Abstract

Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to magneto-ionically and electrically tune the exchange bias in Gd/Ni1–xCoxO thin films (x = 0.50 and 0.67), where neither of the layers alone is ferromagnetic at room temperature. The Gd capping layer deposited onto antiferromagnetic Ni1–xCoxO initiates a solid-state redox reaction that reduces an interfacial region of the oxide to ferromagnetic NiCo. An exchange bias is established after field cooling (FC), which can be enhanced by up to 35% after a voltage conditioning and subsequently reset with a second FC. These effects are caused by the presence of an interfacial ferromagnetic NiCo layer, which further alloys with the Gd layer upon FC and voltage application, as confirmed by electron microscopy and polarized neutron reflectometry studies. These results highlight the viability of the solid-state magneto-ionic approach to achieve electric control of exchange bias, with potential for energy-efficient magneto-ionic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Advanced Memory and Neural Computing · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Physics Department, University of California, Davis, California 95616, United States

Physics Department, Georgetown University, Washington, District of Columbia 20057, United States

King Abdullah University of Science & Technology, Thuwal 23955-6900, Saudi Arabia

NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States

Funding

National Institute of Standards and Technology · King Abdullah University of Science and Technology · Division of Electrical, Communications and Cyber Systems · Division of Materials Research

References (54)

Show source-provided references
1. 10.1038/3505004010.1038/35050040 ↗
2. 10.1126/science.113662910.1126/science.1136629 ↗
3. 10.1038/nmat218410.1038/nmat2184 ↗
4. 10.1038/nmat313010.1038/nmat3130 ↗
5. 10.1038/nmat317110.1038/nmat3171 ↗
6. 10.1038/nnano.2013.9610.1038/nnano.2013.96 ↗
7. 10.1103/physrevlett.113.26720210.1103/physrevlett.113.267202 ↗
8. 10.1038/nmat413410.1038/nmat4134 ↗
9. 10.1038/ncomms1226410.1038/ncomms12264 ↗
10. 10.1038/nature1129610.1038/nature11296 ↗
11. 10.1126/science.123051210.1126/science.1230512 ↗
12. 10.1038/ncomms1105010.1038/ncomms11050 ↗
13. 10.1038/s41563-018-0211-510.1038/s41563-018-0211-5 ↗
14. 10.1021/acsnano.6b0340310.1021/acsnano.6b03403 ↗
15. 10.1038/s41563-018-0246-710.1038/s41563-018-0246-7 ↗
16. 10.1002/aelm.20190029610.1002/aelm.201900296 ↗
17. 10.1063/1.508028410.1063/1.5080284 ↗
18. 10.1126/sciadv.abb772110.1126/sciadv.abb7721 ↗
19. 10.1063/5.004254410.1063/5.0042544 ↗
20. 10.1063/5.004582010.1063/5.0045820 ↗
21. 10.1103/physrevmaterials.2.10440210.1103/physrevmaterials.2.104402 ↗
22. 10.1021/acsnano.8b0540710.1021/acsnano.8b05407 ↗
23. 10.1038/s41467-020-19758-x10.1038/s41467-020-19758-x ↗
24. 10.1021/acsami.9b1882010.1021/acsami.9b18820 ↗
25. 10.1073/pnas.161300611410.1073/pnas.1613006114 ↗
26. 10.1126/sciadv.aba492410.1126/sciadv.aba4924 ↗
27. 10.1103/physrevx.11.02101510.1103/physrevx.11.021015 ↗
28. 10.1103/physrevapplied.12.03400510.1103/physrevapplied.12.034005 ↗
29. 10.1063/1.494264510.1063/1.4942645 ↗
30. 10.1016/s0304-8853(98)00266-210.1016/s0304-8853(98)00266-2 ↗
31. 10.1016/s0304-8853(01)00421-810.1016/s0304-8853(01)00421-8 ↗
32. 10.1016/s0304-8853(99)00453-910.1016/s0304-8853(99)00453-9 ↗
33. 10.1038/nmat278510.1038/nmat2785 ↗
34. 10.1126/sciadv.aat422910.1126/sciadv.aat4229 ↗
35. 10.1002/adma.20180188510.1002/adma.201801885 ↗
36. Kittel C. · 2005
37. 10.1063/1.9892410.1063/1.98924 ↗
38. 10.1063/1.37028210.1063/1.370282 ↗
39. 10.1063/1.34141010.1063/1.341410 ↗
40. 10.1063/1.36157810.1063/1.361578 ↗
41. 10.1557/jmr.1991.268010.1557/jmr.1991.2680 ↗
42. 10.1063/1.10675610.1063/1.106756 ↗
43. Balluffi R. W. · 200510.1002/0471749311 ↗
44. 10.1143/jjap.42.l117810.1143/jjap.42.l1178 ↗
45. 10.1038/nmat339310.1038/nmat3393 ↗
46. 10.1007/bf0264385210.1007/bf02643852 ↗
47. 10.1007/bf0264693110.1007/bf02646931 ↗
48. 10.1016/j.cocis.2011.11.00110.1016/j.cocis.2011.11.001 ↗
49. 10.1107/s160057671801197410.1107/s1600576718011974 ↗
50. Dean J. A. · 2017
51. 10.1103/physrevb.35.367910.1103/physrevb.35.3679 ↗
52. 10.1103/physrevb.61.r1489710.1103/physrevb.61.r14897 ↗
53. 10.1103/physrevb.58.r1471710.1103/physrevb.58.r14717 ↗
54. 10.1103/PhysRevLett.91.01720310.1103/PhysRevLett.91.017203 ↗