Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication
Source abstract
Abstract
The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Advanced Memory and Neural Computing · Nanofabrication and Lithography Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
VTT Technical Research Centre of Finland Ltd., Tietotie 3, Espoo FI-02150, Finland
Funding
Ministry of Education, Culture, Sports, Science and Technology · Academy of Finland
References (30)
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