journal article·2023-07-19Open access

Improved Gas Sensing Capabilities of MoS2/Diamond Heterostructures at Room Temperature

Michal Kočí, Tibor Izsák, Gabriel Vanko, Michaela Sojková, Jana Hrdá, Ondrej Szabó, Miroslav Husák, Karol Végsö, Marian Varga, Alexander Kromka

ACS Applied Materials & Interfaces· Volume 15· Issue 28

Abstract

High Resolution Image Download MS PowerPoint Slide Molybdenum disulfide (MoS 2 ) and nanocrystalline diamond (NCD) have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications, including sensor devices in gas sensing applications. Combining MoS 2 and H-terminated NCD (H-NCD) in a heterostructure design can improve the sensing performance due to their mutual advantages. In this study, the synthesis of MoS 2 and H-NCD thin films using appropriate physical/chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: oxidizing NO 2, reducing NH 3, and neutral synthetic air. It was observed that the MoS 2 /H-NCD heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO 2 (0.157%·ppm –1 ) and reducing NH 3 (0.188%·ppm –1 ) gases compared to pure active materials (pure MoS 2 achieves responses of 0.018%·ppm –1 for NO 2 and −0.0072%·ppm –1 for NH 3, respectively, and almost no response for pure H-NCD at room temperature). Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without the heterostructure. The gas interaction model independently considers the influence of each material (chemisorption for MoS 2 and surface doping mechanism for H-NCD) as well as the current flow mechanism through the formed P–N heterojunction.
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Research context

OpenAlex topics: 2D Materials and Applications · Gas Sensing Nanomaterials and Sensors · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Semiconductors, Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague 6 162 00, Czech Republic

Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 166 27, Czech Republic

Department of Microelectronics and Sensors, Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, Bratislava 841 04, Slovak Republic

Department of Multilayers and Nanostructures, Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, Bratislava 845 11, Slovak Republic

Centre for Advanced Materials Application (CEMEA), Slovak Academy of Sciences, Dúbravská Cesta 5807/9, Bratislava 845 11, Slovak Republic

Funding

Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy · Grantov? Agentura Cesk? Republiky · Akademie Ved Cesk? Republiky · Cesk? Vysok? Ucen? Technick? v Praze · Slovensk? Akad?mia Vied

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