journal article·2020-03-25

Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS2 with Vertically Aligned Nanoflakes

Bok Ki Min, Van-Tam Nguyen, Seong Jun Kim, Yoonsik Yi, Choon-Gi Choi

ACS Applied Materials & Interfaces· Volume 12· Issue 12
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Abstract

The development of MoS2 with two- or three-dimensional heterostructures can provide a significant breakthrough for the enhancement of photodetection abilities such as increase in light absorption and expanding the detection ranges. Till date, although the synthesis of a MoS2 layer with three-dimensional nanostructures using a chemical vapor deposition (CVD) process has been successfully demonstrated, most studies have concentrated on electrochemical applications that utilize structural strengths, for example, a large specific surface area and electrochemically active sites. Here, for the first time, we report spectral light absorption induced by plasmon resonances in single-layer MoS2 (SL-MoS2) with vertically aligned nanoflakes grown by a CVD process. Treatment with oxygen plasma results in the formation of a substoichiometric phase of MoOx in the vertical nanoflakes, which exhibit a high electron density of 4.5 × 1013 cm–2. The substoichiometric MoOx with a high electron-doping level that is locally present on the SL-MoS2 surface induces an absorption band in the near-infrared (NIR) wavelength range of 1000–1750 nm because of the plasmon resonances. Finally, we demonstrate the enhancement of photodetection ability by broadening the detection range from the visible region to the NIR region in oxygen-treated SL-MoS2 with vertically aligned nanoflakes.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Plasmonic and Surface Plasmon Research · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graphene Research Team, ICT Creative Research Laboratoty, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea

School of ETRI (ICT-Advanced Device Technology), University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea

Funding

National Research Foundation of Korea · Electronics and Telecommunications Research Institute

References (35)

Show source-provided references
1. 10.1021/acscatal.6b0266310.1021/acscatal.6b02663 ↗
2. 10.1002/admi.20180007110.1002/admi.201800071 ↗
3. 10.1021/acsami.7b1426210.1021/acsami.7b14262 ↗
4. 10.1021/acsnano.5b0450410.1021/acsnano.5b04504 ↗
5. 10.1016/j.bios.2018.07.06110.1016/j.bios.2018.07.061 ↗
6. 10.1002/adma.20180172910.1002/adma.201801729 ↗
7. 10.1039/b417488g10.1039/b417488g ↗
8. 10.1039/c6nr07965b10.1039/c6nr07965b ↗
9. 10.1039/c5ra13733k10.1039/c5ra13733k ↗
10. 10.1016/j.electacta.2017.10.01410.1016/j.electacta.2017.10.014 ↗
11. 10.1016/j.jcat.2019.04.00710.1016/j.jcat.2019.04.007 ↗
12. 10.1039/c7ce01162h10.1039/c7ce01162h ↗
13. 10.1021/nl400258t10.1021/nl400258t ↗
14. 10.1002/adma.20130609710.1002/adma.201306097 ↗
15. 10.1002/adfm.20150488410.1002/adfm.201504884 ↗
16. 10.1002/advs.20160043010.1002/advs.201600430 ↗
17. 10.1021/acsami.7b1418910.1021/acsami.7b14189 ↗
18. 10.1021/nl503563g10.1021/nl503563g ↗
19. 10.1021/nl401117210.1021/nl4011172 ↗
20. 10.1038/srep2140510.1038/srep21405 ↗
21. 10.1021/nl403036h10.1021/nl403036h ↗
22. 10.1021/jp506964m10.1021/jp506964m ↗
23. 10.1021/nn500532f10.1021/nn500532f ↗
24. 10.1063/1.494155110.1063/1.4941551 ↗
25. 10.1126/sciadv.aao503110.1126/sciadv.aao5031 ↗
26. 10.1039/c7cc08090e10.1039/c7cc08090e ↗
27. 10.1002/adfm.20170600610.1002/adfm.201706006 ↗
28. 10.1002/smll.20180525110.1002/smll.201805251 ↗
29. 10.1002/aelm.20160033510.1002/aelm.201600335 ↗
30. 10.1021/acs.jpcc.7b0817110.1021/acs.jpcc.7b08171 ↗
31. 10.1021/jp407377g10.1021/jp407377g ↗
32. 10.1038/nmat350510.1038/nmat3505 ↗
33. 10.1002/adfm.20150369810.1002/adfm.201503698 ↗
34. 10.1021/acsami.6b1181110.1021/acsami.6b11811 ↗
35. Bohren C. · 1983