Passivation of Germanium by Graphene
Source abstract
Abstract
The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy. Graphene properly grown by chemical vapor deposition on Ge(100), (111), or (110) effectively inhibits room-temperature oxidation of the surface. When graphene is transferred to the Ge surface, oxidation is reduced relative to that on uncovered Ge but has the same power law dependence. We conclude that access to the graphene/Ge interface must occur via defects in the graphene. The excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, University of Wisconsin—Madison, Madison, Wisconsin 53706, United States
Department of Electrical Engineering and Center for High-Technology Materials, University of New Mexico, Albuquerque, New Mexico 87132, United States
Funding
U.S. Department of Energy
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