journal article·2020-03-18

Enhanced Thermoelectric and Mechanical Performance in n-Type Yb-Filled Skutterudites through Aluminum Alloying

Dandan Qin, Bo Cui, Jianbo Zhu, Wenjing Shi, Haixu Qin, Fengkai Guo, Jian Cao, Wei Cai, Jiehe Sui

ACS Applied Materials & Interfaces· Volume 12· Issue 11
Publisher page

Abstract

Herein, we demonstrate a synergistic combination of novel mechanisms in aluminum (Al)-alloyed Yb0.3Co4Sb12-based thermoelectric materials to address both reduction in thermal conductivity and concomitant enhancement in power factor (PF). Upon Al alloying, CoAl nanoprecipitates are embedded in the matrix, leading to (1) significant local strain and thus intensified phonon scattering and (2) carrier injection because of interphase electron transfer. Moreover, by decreasing the Yb filling fraction, not only is the electronic thermal conductivity significantly suppressed but also the carrier concentration is modulated to the optimum range, thus resulting in the dramatically boosted PF, especially below 773 K. As a result, a peak ZT value of 1.36 at 873 K and ZTave of 0.96 from 300 to 873 K were obtained in Yb0.21Co4Sb12/0.32CoAl. Last but not the least, the mechanical properties of the Al-alloyed samples were considerably improved through CoAl precipitate hardening, offering great potential for commercial applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China

National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, China

Funding

National Natural Science Foundation of China

References (57)

Show source-provided references
1. 10.1126/science.aad374910.1126/science.aad3749 ↗
2. 10.1016/j.nanoen.2018.03.00210.1016/j.nanoen.2018.03.002 ↗
3. 10.1039/c9ee00317g10.1039/c9ee00317g ↗
4. 10.1039/c8ee03162b10.1039/c8ee03162b ↗
5. 10.1039/c7mh00865a10.1039/c7mh00865a ↗
6. 10.1016/j.actamat.2019.04.02510.1016/j.actamat.2019.04.025 ↗
7. 10.1038/nmat209010.1038/nmat2090 ↗
8. 10.1038/s41524-019-0215-y10.1038/s41524-019-0215-y ↗
9. 10.1016/j.actamat.2018.08.02010.1016/j.actamat.2018.08.020 ↗
10. 10.1021/acsami.9b0524310.1021/acsami.9b05243 ↗
11. 10.1039/c9ta05798f10.1039/c9ta05798f ↗
12. 10.1002/smll.20180261510.1002/smll.201802615 ↗
13. 10.1038/nature0999610.1038/nature09996 ↗
14. 10.1038/nmat443010.1038/nmat4430 ↗
15. 10.1039/c6ee02674e10.1039/c6ee02674e ↗
16. 10.1016/j.mtphys.2019.03.00110.1016/j.mtphys.2019.03.001 ↗
17. 10.1039/c8ta07445c10.1039/c8ta07445c ↗
18. 10.1016/j.nanoen.2016.11.01610.1016/j.nanoen.2016.11.016 ↗
19. 10.1016/j.nanoen.2017.10.00310.1016/j.nanoen.2017.10.003 ↗
20. 10.1016/j.actamat.2015.07.02710.1016/j.actamat.2015.07.027 ↗
21. 10.1002/adma.20160676810.1002/adma.201606768 ↗
22. 10.1016/j.cogsc.2017.02.00610.1016/j.cogsc.2017.02.006 ↗
23. 10.1002/aenm.20160258210.1002/aenm.201602582 ↗
24. 10.1016/j.actamat.2013.09.03910.1016/j.actamat.2013.09.039 ↗
25. 10.1021/ja111199y10.1021/ja111199y ↗
26. 10.1038/am.2016.7710.1038/am.2016.77 ↗
27. 10.1016/j.scriptamat.2017.11.01910.1016/j.scriptamat.2017.11.019 ↗
28. 10.1016/j.nanoen.2011.10.00110.1016/j.nanoen.2011.10.001 ↗
29. 10.1039/c6ee02467j10.1039/c6ee02467j ↗
30. 10.1016/j.jallcom.2016.10.11410.1016/j.jallcom.2016.10.114 ↗
31. 10.1063/1.234524910.1063/1.2345249 ↗
32. 10.1007/s10853-017-0772-810.1007/s10853-017-0772-8 ↗
33. 10.1016/j.actamat.2010.03.02510.1016/j.actamat.2010.03.025 ↗
34. 10.1021/acsami.6b0902610.1021/acsami.6b09026 ↗
35. 10.1039/c5tc01739d10.1039/c5tc01739d ↗
36. 10.1039/c6ta09092c10.1039/c6ta09092c ↗
37. 10.1016/j.scriptamat.2018.11.01510.1016/j.scriptamat.2018.11.015 ↗
38. 10.1039/c7qi00304h10.1039/c7qi00304h ↗
39. 10.1039/c4ta05083e10.1039/c4ta05083e ↗
40. 10.1166/sam.2017.240610.1166/sam.2017.2406 ↗
41. 10.1016/j.actamat.2017.12.00110.1016/j.actamat.2017.12.001 ↗
42. 10.1088/1361-648x/aaa5ea10.1088/1361-648x/aaa5ea ↗
43. 10.3389/fchem.2015.0005310.3389/fchem.2015.00053 ↗
44. 10.1039/c3ta13729e10.1039/c3ta13729e ↗
45. 10.1007/s11664-016-4978-310.1007/s11664-016-4978-3 ↗
46. 10.1088/1674-1056/27/4/04840210.1088/1674-1056/27/4/048402 ↗
47. 10.1039/c5ta01594d10.1039/c5ta01594d ↗
48. 10.1038/nature2366710.1038/nature23667 ↗
49. 10.1038/nnano.2016.18210.1038/nnano.2016.182 ↗
50. 10.1002/adfm.20140266310.1002/adfm.201402663 ↗
51. 10.1016/j.mtphys.2017.12.00410.1016/j.mtphys.2017.12.004 ↗
52. 10.1002/aenm.20190243510.1002/aenm.201902435 ↗
53. 10.1103/physrevlett.46.74910.1103/physrevlett.46.749 ↗
54. Rhoderick, E.; Williams, R. Metal-Semiconductor Contacts, 2nd ed. Clarendon Press, 1988; pp 10–15.
55. 10.1016/j.scriptamat.2015.07.04510.1016/j.scriptamat.2015.07.045 ↗
56. 10.1016/j.actamat.2009.03.01810.1016/j.actamat.2009.03.018 ↗
57. 10.1063/1.493682910.1063/1.4936829 ↗