Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy
Source abstract
Abstract
Zn(O,S) buffer layer electronic configuration is determined by its composition and thickness, tunable through atomic layer deposition. The Zn K and L-edges in the X-ray absorption near edge structure verify ionicity and covalency changes with S content. A high intensity shoulder in the Zn K-edge indicates strong Zn 4s hybridized states and a preferred c-axis orientation. 2-3 nm thick films with low S content show a subdued shoulder showing less contribution from Zn 4s hybridization. A lower energy shift with film thickness suggests a decreasing bandgap. Further, ZnSO 4 forms at substrate interfaces, which may be detrimental for device performance.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
Department of Mechanical and Industrial Engineering, Norwegian University of Science and Technology, Trondheim 7491, Norway
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
Funding
Austrian Science Fund · Stanford University
References (21)
Show source-provided references
1. 10.1002/pip.276410.1002/pip.2764 ↗
2. 10.1063/1.478985510.1063/1.4789855 ↗
3. 10.1063/1.222206710.1063/1.2222067 ↗
4. 10.4229/28thEUPVSEC2013-3BO.7.510.4229/28thEUPVSEC2013-3BO.7.5 ↗
5. 10.1016/j.solmat.2016.01.04310.1016/j.solmat.2016.01.043 ↗
6. 10.1038/srep0177510.1038/srep01775 ↗
7. 10.1021/acs.jpclett.6b0039310.1021/acs.jpclett.6b00393 ↗
8. 10.1021/acs.nanolett.5b0237310.1021/acs.nanolett.5b02373 ↗
9. 10.1039/C5TC02912K10.1039/C5TC02912K ↗
10. 10.1021/acsami.6b0400010.1021/acsami.6b04000 ↗
11. 10.1038/srep1686310.1038/srep16863 ↗
12. 10.1021/acs.chemmater.5b0422310.1021/acs.chemmater.5b04223 ↗
13. 10.1002/aenm.20110024610.1002/aenm.201100246 ↗
14. 10.1063/1.173707510.1063/1.1737075 ↗
15. 10.1063/1.363177410.1063/1.3631774 ↗
16. 10.1103/PhysRevB.66.24520510.1103/PhysRevB.66.245205 ↗
17. 10.1021/jp412000j10.1021/jp412000j ↗
18. 10.1080/0015019940821602110.1080/00150199408216021 ↗
19. 10.1063/1.44750910.1063/1.447509 ↗
20. 10.1021/jp507304410.1021/jp5073044 ↗
21. 10.1016/j.triboint.2010.10.01810.1016/j.triboint.2010.10.018 ↗