Significant Enhancement in the Thermoelectric Performance of a Bismuth Telluride Nanocompound through Brief Fabrication Procedures
Source abstract
Abstract
A binary BiTe nanocompound for thermoelectric applications was prepared via a water-based chemical reaction under atmospheric conditions. We attempted to increase the carrier mobility of the nanocompound by adopting a post-thermal treatment consisting of calcination and reduction at different temperatures. We also tried to control the carrier density of the compound by adjusting the stoichiometry of the atomic constituents. We measured other transport properties (i.e., electrical resistivity, Seebeck coefficient, and thermal conductivity) and observed how these properties were affected by both the carrier mobility and the carrier density. We derived the thermoelectric performance, as captured by the figure of merit (ZT), from the transport properties and discussed the effect of such properties on the ZT value. The nanocompound exhibited a very competent ZT value (0.91 at 100 °C), which is one of the best thermoelectric performances of chemically synthesized BiTe materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Heusler alloys: electronic and magnetic properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Daegu Gyeongbuk Institute of Science and Technology (DGIST), 50-1 Sang-ri, Hyeonpung-myeon, Dalseong-gun, Daegu 711-873, Republic of Korea
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31 Hyoja-dong, Pohang 790-784, Republic of Korea
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