journal article·2020-03-11Open access

Electroforming in Metal-Oxide Memristive Synapses

Tao Wang, Yuanyuan Shi, Francesco Maria Puglisi, Shaochuan Chen, Kaichen Zhu, Ying Zuo, Xuehua Li, Xu Jing, Tingting Han, Biyu Guo, Kristýna Bukvišová, Lukáš Kachtík, Miroslav Kolíbal, Chao Wen, Mario Lanza

ACS Applied Materials & Interfaces· Volume 12· Issue 10

Abstract

Memristors have shown an extraordinary potential to emulate the plastic and dynamic electrical behaviors of biological synapses and have been already used to construct neuromorphic systems with in-memory computing and unsupervised learning capabilities; moreover, the small size and simple fabrication process of memristors make them ideal candidates for ultradense configurations. So far, the properties of memristive electronic synapses (i.e., potentiation/depression, relaxation, linearity) have been extensively analyzed by several groups. However, the dynamics of electroforming in memristive devices, which defines the position, size, shape, and chemical composition of the conductive nanofilaments across the device, has not been analyzed in depth. By applying ramped voltage stress (RVS), constant voltage stress (CVS), and pulsed voltage stress (PVS), we found that electroforming is highly affected by the biasing methods applied. We also found that the technique used to deposit the oxide, the chemical composition of the adjacent metal electrodes, and the polarity of the electrical stimuli applied have important effects on the dynamics of the electroforming process and in subsequent post-electroforming bipolar resistive switching. This work should be of interest to designers of memristive neuromorphic systems and could open the door for the implementation of new bioinspired functionalities into memristive neuromorphic systems.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China

IMEC, Kapeldreef 75, Heverlee, B-3001 Leuven, Belgium

Dipartimento di Ingegneria “Enzo Ferrari”, Università degli Studi di Modena e Reggio Emilia, Via P. Vivarelli 10/1, 41125 Modena, Missouri, Italy

Departament d’Enginyeria Electrònica i Biomèdica Universitat de Barcelona Martí i Franquès 1, E-08028 Barcelona, Spain

Central European Institute of Technology, Brno University of Technology, Purkyňova 123, 61200 Brno, Czech Republic

Institute of Physical Engineering, Brno University of Technology, Technická 2, Brno 61669, Czech Republic

Funding

State Administration of Foreign Experts Affairs · Collaborative Innovation Center of Suzhou Nano Science and Technology · Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Ministry of Finance · National Natural Science Foundation of China · Priority Academic Program Development of Jiangsu Higher Education Institutions · Jiangsu Provincial Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University

References (41)

Show source-provided references
1. O’Hare G. M. P. · 1996
2. 10.1145/359576.35957910.1145/359576.359579 ↗
3. 10.1038/nature1696110.1038/nature16961 ↗
4. 10.1109/JPROC.2014.231356510.1109/JPROC.2014.2313565 ↗
5. 10.1126/science.125464210.1126/science.1254642 ↗
6. 10.1016/j.suscom.2013.11.00110.1016/j.suscom.2013.11.001 ↗
7. Holler, M.; Tam, S.; Castro, H.; Benson, R. In An Electrically Trainable Artificial Neural Network with 10240 ‘Floating Gate’ Synapses, Proceedings of the International Joint Conference on Neural Networks, Washington, D.C., Vol. II, 1989; pp 191–196.10.1109/IJCNN.1989.118698 ↗
8. 10.1109/TED.2014.233170710.1109/TED.2014.2331707 ↗
9. 10.1088/0957-4484/24/38/38200110.1088/0957-4484/24/38/382001 ↗
10. 10.1038/nmat485610.1038/nmat4856 ↗
11. Agarwal, S.; Gedrim, R. B. J.; Hsia, A. H.; Hughart, D. R.; Fuller, E. J.; Talin, A. A.; James, C. D.; Plimpton, S. J.; Marinella, M. J. In Achieving Ideal Accuracies in Analog Neuromorphic Computing Using Periodic Carry, 2017 Symposium on VLSI Technology T13.2, 2017.10.23919/VLSIT.2017.7998164 ↗
12. 10.1038/s41586-018-0180-510.1038/s41586-018-0180-5 ↗
13. 10.1038/s41467-018-04482-410.1038/s41467-018-04482-4 ↗
14. 10.1038/nmat475610.1038/nmat4756 ↗
15. 10.1021/acs.nanolett.5b0069710.1021/acs.nanolett.5b00697 ↗
16. 10.3390/make101000510.3390/make1010005 ↗
17. Park, S.; Kim, H.; Choo, M.; Noh, J.; Sheri, A.; Jung, S.; Park, J.; Kim, S.; Lee, W.; Shin, J.; Lee, D.; Choi, G.; Woo, J.; Cha, E.; Jang, J.; Park, C.; Jeon, M.; Lee, B.; Lee, B. H.; Hwang, H. In RRAM-Based Synapse for Neuromorphic System with Pattern Recognition Function, 2012 International Electron Devices Meeting, 2012; pp 10.2.1–10.2.4.10.1109/IEDM.2012.6479016 ↗
18. 10.1002/aelm.20180014310.1002/aelm.201800143 ↗
19. Wu, Y.; Yu, S.; Wong, H. S. P.; Chen, Y. S.; Lee, H. Y.; Wang, S. M.; Gu, P. Y.; Chen, F.; Tsai, M. J. In AlOx-Based Resistive Switching Device with Gradual Resistance Modulation for Neuromorphic Device Application, 2012 4th IEEE International Memory Workshop, 2012; pp 1–4.10.1109/IMW.2012.6213663 ↗
20. 10.1038/s41928-018-0118-910.1038/s41928-018-0118-9 ↗
21. 10.1146/annurev.neuro.31.060407.12563910.1146/annurev.neuro.31.060407.125639 ↗
22. 10.1038/7882910.1038/78829 ↗
23. 10.1109/TPAMI.2017.270039010.1109/TPAMI.2017.2700390 ↗
24. 10.1016/j.compbiomed.2017.09.01710.1016/j.compbiomed.2017.09.017 ↗
25. 10.1109/TSG.2016.262945010.1109/TSG.2016.2629450 ↗
26. 10.1038/s41598-018-25376-x10.1038/s41598-018-25376-x ↗
27. 10.1021/nl904092h10.1021/nl904092h ↗
28. 10.1002/adfm.20170692710.1002/adfm.201706927 ↗
29. 10.1002/adfm.20180372810.1002/adfm.201803728 ↗
30. 10.1007/s00339-011-6296-110.1007/s00339-011-6296-1 ↗
31. 10.1063/1.362447210.1063/1.3624472 ↗
32. Puglisi F. M. · 2019 · 10310.1016/B978-0-08-102584-0.00004-8 ↗
33. 10.1109/TNANO.2010.204193510.1109/TNANO.2010.2041935 ↗
34. 10.1063/1.214771410.1063/1.2147714 ↗
35. 10.1007/BF0132054310.1007/BF01320543 ↗
36. 10.1109/JPROC.2012.219036910.1109/JPROC.2012.2190369 ↗
37. 10.1016/j.sse.2014.06.00110.1016/j.sse.2014.06.001 ↗
38. 10.1109/LED.2010.209920510.1109/LED.2010.2099205 ↗
39. 10.1021/acsami.6b0295710.1021/acsami.6b02957 ↗
40. Padovani, A.; Larcher, L.; Puglisi, F. M.; Pavan, P. In Multiscale Modeling of Defect-Related Phenomena in High-k Based Logic and Memory Devices, IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). Chengdu, 2017; pp 1–6.10.1109/IPFA.2017.8060063 ↗
41. Larcher, L.; Puglisi, F. M.; Padovani, A.; Vandelli, L.; Pavan, P. In Multiscale Modeling of Electron-Ion Interactions for Engineering Novel Electronic Devices and Materials, 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS), Bremen, 2016; pp 296–300.10.1109/PATMOS.2016.7833703 ↗