journal article·2019-03-27

Thermoelectric Enhancement of Silicon Membranes by Ultrathin Amorphous Films

Anthony George, Ryoto Yanagisawa, Roman Anufriev, Jinghan He, Naoko Yoshie, Naohito Tsujii, Quansheng Guo, Takao Mori, Sebastian Volz, Masahiro Nomura

ACS Applied Materials & Interfaces· Volume 11· Issue 12
Publisher page

Abstract

We propose a simple, low-cost, and large-area method to increase the thermoelectric figure of merit (ZT) in silicon membranes by the deposition of an ultrathin aluminum layer. Transmission electron microscopy showed that short deposition of aluminum on a silicon substrate covers the surface with an ultrathin amorphous film, which, according to recent theoretical works, efficiently destroys phonon wave packets. As a result, we measured 30-40% lower thermal conductivity in silicon membranes covered with aluminum films while the electrical conductivity was not affected. Thus, we have achieved 40-45% higher ZT values in membranes covered with aluminum films. To demonstrate a practical application, we applied this method to enhance the performance of a silicon membrane-based thermoelectric device and measured 42% higher power generation.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Thermal Radiation and Cooling Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan

PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology · Core Research for Evolutional Science and Technology · Precursory Research for Embryonic Science and Technology · Thermal and Electric Energy Technology Foundation · Japan Society for the Promotion of Science

References (37)

Show source-provided references
1. 10.1080/14686996.2018.153093810.1080/14686996.2018.1530938 ↗
2. 10.1002/aenm.20110020710.1002/aenm.201100207 ↗
3. 10.1002/pssa.20130040810.1002/pssa.201300408 ↗
4. 10.1016/j.apenergy.2014.12.07510.1016/j.apenergy.2014.12.075 ↗
5. 10.1016/j.matlet.2015.05.01210.1016/j.matlet.2015.05.012 ↗
6. 10.1002/smll.20170201310.1002/smll.201702013 ↗
7. 10.1016/j.mtphys.2017.06.00110.1016/j.mtphys.2017.06.001 ↗
8. 10.1063/1.360729510.1063/1.3607295 ↗
9. 10.1063/1.486179610.1063/1.4861796 ↗
10. 10.1063/1.498379010.1063/1.4983790 ↗
11. 10.1039/C6NR06302K10.1039/C6NR06302K ↗
12. 10.1021/acsnano.5b0538510.1021/acsnano.5b05385 ↗
13. 10.1063/1.492219810.1063/1.4922198 ↗
14. 10.1103/PhysRevB.93.04541110.1103/PhysRevB.93.045411 ↗
15. 10.1038/s41467-017-00115-410.1038/s41467-017-00115-4 ↗
16. 10.7567/JJAP.57.08010110.7567/JJAP.57.080101 ↗
17. 10.1063/1.507993110.1063/1.5079931 ↗
18. 10.1038/s41598-018-26872-w10.1038/s41598-018-26872-w ↗
19. 10.1021/nl102931z10.1021/nl102931z ↗
20. 10.1016/j.commatsci.2016.06.00110.1016/j.commatsci.2016.06.001 ↗
21. 10.1038/nature0638110.1038/nature06381 ↗
22. 10.1063/1.497908010.1063/1.4979080 ↗
23. 10.1021/nn506792d10.1021/nn506792d ↗
24. 10.1103/PhysRevB.95.18030110.1103/PhysRevB.95.180301 ↗
25. 10.1039/C7NR05114J10.1039/C7NR05114J ↗
26. 10.1103/PhysRevB.98.15541810.1103/PhysRevB.98.155418 ↗
27. 10.1063/1.500836710.1063/1.5008367 ↗
28. 10.1016/S0927-796X(00)00023-110.1016/S0927-796X(00)00023-1 ↗
29. 10.1063/1.12399410.1063/1.123994 ↗
30. 10.1103/PhysRevX.8.04100410.1103/PhysRevX.8.041004 ↗
31. 10.1063/1.170974610.1063/1.1709746 ↗
32. 10.1109/JMEMS.2010.204103510.1109/JMEMS.2010.2041035 ↗
33. 10.1038/srep4179410.1038/srep41794 ↗
34. 10.1080/14686996.2018.146017710.1080/14686996.2018.1460177 ↗
35. 10.1080/14686996.2018.154252410.1080/14686996.2018.1542524 ↗
36. 10.1038/ncomms1550510.1038/ncomms15505 ↗
37. 10.1021/acsnano.8b0759710.1021/acsnano.8b07597 ↗