Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO2(001) Anatase Thin Films
Source abstract
Abstract
We report the study of anatase TiO 2 (001)-oriented thin films grown by pulsed laser deposition on LaAlO 3 (001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti 3+ -localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti 3+ electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti 3+ only in a well-defined range of deposition pressure; outside this range, Ti 3+ and the strength of the in-gap states are reduced.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · TiO2 Photocatalysis and Solar Cells · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Elettra Sincrotrone Trieste S.c.p.A., Basovizza, I-34012 Trieste, Italy
CNR—SPIN, UOS Salerno, I-84084 Fisciano, Italy
CNR—SPIN, UOS Napoli, I-80126 Napoli, Italy
Department of Physics, University of Napoli Federico II, I-80126 Napoli, Italy
CNR—ISMN, UOS Bologna, I-40129 Bologna, Italy
CNR—IOM, Laboratorio TASC, I-34149 Trieste, Italy
Synchrotron SOLEIL, L’Orme des Merisiers, BP 48, Saint Aubin, 91192 Gif sur Yvette, France
Laboratoire de Chimie Physique-Matière et Rayonnement, UPMC Université; Paris 06, CNRS, UMR 7614, F-75005 Paris, France
Department of Physics, University of Milano, I-20133 Milano, Italy
International Centre for Theoretical Physics (ICTP), I-34100 Trieste, Italy
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