Two-Dimensional WSe₂/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping

Two-dimensional (2D) materials, with atomic thickness and unique electronic structure, hold great potentials in electronic device applications. Charge transfer at the interface of 2D materials further provides a versatile platform for applications in electronics. Here, we report nonvolatile memory devices based on interface charge trapping between 2D WSe2 and organic electron acceptors. The 2D WSe2–organic acceptor hybrid structure exhibits a high storage performance, such as large gate memory windows, high on/off ratios (>103), and long retention time (>1000 s). Further analysis revealed that organic acceptors with a stronger electron affinity (i.e., higher redox potential) have a larger electron-trapping ability and hence a better memory performance.