journal article·2021-12-08Open access

Atomic and Molecular Layer Deposition of Alkali Metal Based Thin Films

Milad Madadi, Juho Heiska, Jenna Multia, Maarit Karppinen

ACS Applied Materials & Interfaces· Volume 13· Issue 48

Abstract

Atomic layer deposition (ALD) is the fastest growing thin-film technology in microelectronics, but it is also recognized as a promising fabrication strategy for various alkali-metal-based thin films in emerging energy technologies, the spearhead application being the Li-ion battery. Since the pioneering work in 2009 for Li-containing thin films, the field has been rapidly growing and also widened from lithium to other alkali metals. Moreover, alkali-metal-based metal-organic thin films have been successfully grown by combining molecular layer deposition (MLD) cycles of the organic molecules with the ALD cycles of the alkali metal precursor. The current literature describes already around 100 ALD and ALD/MLD processes for alkali-metal-bearing materials. Interestingly, some of these materials cannot even be made by any other synthesis route. In this review, our intention is to present the current state of research in the field by (i) summarizing the ALD and ALD/MLD processes so far developed for the different alkali metals, (ii) highlighting the most intriguing thin-film materials obtained thereof, and (iii) addressing both the advantages and limitations of ALD and MLD in the application space of these materials. Finally, (iv) a brief outlook for the future perspectives and challenges of the field is given.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Advancements in Battery Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry and Materials Science, Aalto University, FI-00076 Espoo, Finland

Funding

Academy of Finland

References (100+)

Show source-provided references
1. 10.1002/cvde.20150201310.1002/cvde.201502013 ↗
2. 10.1016/S0920-2307(89)80006-410.1016/S0920-2307(89)80006-4 ↗
3. 10.1021/cr900056b10.1021/cr900056b ↗
4. 10.1016/S0040-6090(02)00117-710.1016/S0040-6090(02)00117-7 ↗
5. 10.1016/j.mattod.2014.04.02610.1016/j.mattod.2014.04.026 ↗
6. 10.1039/C6CC05568K10.1039/C6CC05568K ↗
7. 10.1021/acs.chemmater.9b0441410.1021/acs.chemmater.9b04414 ↗
8. Atomic Limits ALD Database. https://www.atomiclimits.com/alddatabase/ (accessed 2021-07-01).
9. 10.1039/b913466b10.1039/b913466b ↗
10. 10.1021/acs.jpcc.0c0928410.1021/acs.jpcc.0c09284 ↗
11. 10.1116/1.364334910.1116/1.3643349 ↗
12. 10.1021/jp312309g10.1021/jp312309g ↗
13. 10.1002/pssa.20133013010.1002/pssa.201330130 ↗
14. 10.1002/chem.20170370410.1002/chem.201703704 ↗
15. 10.1021/jp308828p10.1021/jp308828p ↗
16. 10.1039/C3TC30271G10.1039/C3TC30271G ↗
17. 10.1063/1.10541510.1063/1.105415 ↗
18. 10.1149/1.297997510.1149/1.2979975 ↗
19. 10.1021/cm703297710.1021/cm7032977 ↗
20. 10.1016/j.apsusc.2011.02.02210.1016/j.apsusc.2011.02.022 ↗
21. 10.3762/bjnano.5.12310.3762/bjnano.5.123 ↗
22. 10.1039/C7TA04449F10.1039/C7TA04449F ↗
23. 10.1021/acs.nanolett.5b0460410.1021/acs.nanolett.5b04604 ↗
24. 10.1002/chem.20190103410.1002/chem.201901034 ↗
25. 10.1002/chem.20160581610.1002/chem.201605816 ↗
26. 10.1016/j.joule.2018.11.01210.1016/j.joule.2018.11.012 ↗
27. 10.1002/admi.20160076210.1002/admi.201600762 ↗
28. 10.1039/C9TA04328D10.1039/C9TA04328D ↗
29. 10.1016/j.ensm.2020.05.00110.1016/j.ensm.2020.05.001 ↗
30. 10.1116/6.000058910.1116/6.0000589 ↗
31. Shevjakov A. M. · Proc. Second USSR Conf. High-Temperature Chem. Oxides, Leningrad, USSR · 1965 · 149
32. 10.1063/1.513339010.1063/1.5133390 ↗
33. 10.1116/1.514060310.1116/1.5140603 ↗
34. 10.1039/D0CP03358H10.1039/D0CP03358H ↗
35. 10.1088/0268-1242/29/4/04300110.1088/0268-1242/29/4/043001 ↗
36. 10.1088/1361-6641/aa78ce10.1088/1361-6641/aa78ce ↗
37. 10.1039/a606316k10.1039/a606316k ↗
38. 10.1039/C5DT00436E10.1039/C5DT00436E ↗
39. 10.1021/acs.chemmater.8b0287810.1021/acs.chemmater.8b02878 ↗
40. 10.1016/0040-6090(94)90168-610.1016/0040-6090(94)90168-6 ↗
41. 10.1002/admi.20170136610.1002/admi.201701366 ↗
42. 10.3390/ma912100710.3390/ma9121007 ↗
43. 10.1039/B612823H10.1039/B612823H ↗
44. 10.1039/C5CC08538A10.1039/C5CC08538A ↗
45. 10.1116/6.000034510.1116/6.0000345 ↗
46. 10.1039/C7DT03753H10.1039/C7DT03753H ↗
47. 10.1021/acs.jpcc.7b0612910.1021/acs.jpcc.7b06129 ↗
48. 10.1116/1.497220910.1116/1.4972209 ↗
49. 10.1039/C4DT01930J10.1039/C4DT01930J ↗
50. 10.1016/S0022-328X(00)92291-510.1016/S0022-328X(00)92291-5 ↗
51. 10.1039/D0DT02324H10.1039/D0DT02324H ↗
52. 10.1021/acs.chemmater.5b0219910.1021/acs.chemmater.5b02199 ↗
53. 10.1021/acs.chemmater.7b0080510.1021/acs.chemmater.7b00805 ↗
54. 10.1039/C8TA00804C10.1039/C8TA00804C ↗
55. 10.1021/acs.chemmater.6b0358610.1021/acs.chemmater.6b03586 ↗
56. 10.1116/1.508149410.1116/1.5081494 ↗
57. 10.1039/C7RA07722J10.1039/C7RA07722J ↗
58. 10.1021/jp509298r10.1021/jp509298r ↗
59. 10.4028/www.scientific.net/KEM.822.78710.4028/www.scientific.net/KEM.822.787 ↗
60. 10.1149/1.352936710.1149/1.3529367 ↗
61. 10.1021/acs.jpcc.5b0921210.1021/acs.jpcc.5b09212 ↗
62. 10.1149/1.348525910.1149/1.3485259 ↗
63. 10.1021/acs.jpcc.8b1221610.1021/acs.jpcc.8b12216 ↗
64. 10.1002/admi.20190140710.1002/admi.201901407 ↗
65. 10.1039/c2ra20731a10.1039/c2ra20731a ↗
66. 10.1021/nn505480w10.1021/nn505480w ↗
67. 10.1021/cm400046w10.1021/cm400046w ↗
68. 10.1002/cvde.20120702610.1002/cvde.201207026 ↗
69. 10.1021/acsnano.7b0256110.1021/acsnano.7b02561 ↗
70. 10.1126/sciadv.aao317010.1126/sciadv.aao3170 ↗
71. 10.1016/j.jpowsour.2019.22737310.1016/j.jpowsour.2019.227373 ↗
72. 10.1021/acsami.8b0457310.1021/acsami.8b04573 ↗
73. 10.1116/6.000031410.1116/6.0000314 ↗
74. 10.1117/12.223819810.1117/12.2238198 ↗
75. Hennessy, J.; Moore, C. S.; Balasubramanian, K.; Jewell, A. D.; Nikzad, S.; France, K. C.; Carter, C. Atomic Layer Deposition and Etching Methods for Far Ultraviolet Aluminum Mirrors. Proceedings from the Astronomical Optics: Design, Manufacture, and Test of Space and Ground Systems, September 21, 2017, San Diego, CA; SPIE: Bellingham, WA, 2017; Vol. 10401, p 1040119.10.1117/12.2274633 ↗
76. 10.1149/08003.0107ecst10.1149/08003.0107ecst ↗
77. 10.3390/inorganics602004610.3390/inorganics6020046 ↗
78. 10.1039/D0CP05428C10.1039/D0CP05428C ↗
79. 10.1116/6.000084410.1116/6.0000844 ↗
80. 10.1007/s11581-021-04030-z10.1007/s11581-021-04030-z ↗
81. 10.1149/2.052203jes10.1149/2.052203jes ↗
82. 10.1088/0957-4484/25/50/50400710.1088/0957-4484/25/50/504007 ↗
83. 10.1002/aenm.20160140210.1002/aenm.201601402 ↗
84. 10.1021/acsami.0c2196110.1021/acsami.0c21961 ↗
85. 10.1021/acs.chemmater.5b0165410.1021/acs.chemmater.5b01654 ↗
86. 10.1149/07520.0061ecst10.1149/07520.0061ecst ↗
87. 10.1149/2.1191906jes10.1149/2.1191906jes ↗
88. 10.1149/1945-7111/abdc7c10.1149/1945-7111/abdc7c ↗
89. 10.1021/cm200899k10.1021/cm200899k ↗
90. 10.1116/1.489000610.1116/1.4890006 ↗
91. 10.1021/cm500512n10.1021/cm500512n ↗
92. 10.1007/s12274-017-1588-110.1007/s12274-017-1588-1 ↗
93. 10.1039/C6RA03137D10.1039/C6RA03137D ↗
94. 10.1002/celc.20160013910.1002/celc.201600139 ↗
95. 10.1149/1.363368310.1149/1.3633683 ↗
96. 10.1149/2.011305jes10.1149/2.011305jes ↗
97. 10.1021/jp409399y10.1021/jp409399y ↗
98. 10.6060/ivkkt.20206309.617710.6060/ivkkt.20206309.6177 ↗
99. 10.1021/acs.jpcc.9b0303910.1021/acs.jpcc.9b03039 ↗
100. 10.1021/acsami.7b1346710.1021/acsami.7b13467 ↗