journal article·2016-10-12

Improved Performance by SiO2 Hollow Nanospheres for Silver Nanowire-Based Flexible Transparent Conductive Films

Liwen Zhang, Longjiang Zhang, Yejun Qiu, Yang Ji, Ya Liu, Hong Liu, Guangji Li, Qiuquan Guo

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Abstract

Flexible transparent conductive films (TCFs) have attracted tremendous interest thanks to the rapid development of portable/flexible/wearable electronics. TCFs on the basis of silver nanowires (AgNWs) with excellent performance are becoming an efficient alternative to replace the brittle transparent metal oxide. In this study, a promising method was developed by introducing SiO 2 hollow nanospheres (SiO 2 –HNSs) into the film to significantly improve the performance of AgNW-based TCFs. Since SiO 2 –HNSs have opposite charges to AgNWs, the strong attraction had promoted a uniform distribution of AgNWs and made the distance between AgNWs closer, which could decrease the contact resistance greatly. The introduction of SiO 2 layer remarkably enhanced the transmission of visible light and the conductivity. In addition, the TCFs constructed by AgNWs and SiO 2 –HNSs showed much higher thermal stability and adhesive force than those by only AgNWs. As an example, the transmission of AgNW/SiO 2 –HNS-coated poly(ethylene terephthalate) (PET) could increase about 14.3% in comparison to AgNW-coated PET. Typically, a AgNW/SiO 2 –HNS-based TCF with a sheet resistance of about 33 Ω/sq and transmittance of about 98.0% (excluding substrate) could be obtained with excellent flexibility, adhesion, and thermal stability. At last some devices were fabricated.
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Research context

OpenAlex topics: Nanomaterials and Printing Technologies · Advanced Sensor and Energy Harvesting Materials · Nanofabrication and Lithography Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenzhen Engineering Lab of Flexible Transparent Conductive Films, Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen 518055, China

School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China

Department of Mechanical and Materials Engineering, The University of Western Ontario, London, Ontario N6A 5B9, Canada

Funding

National Natural Science Foundation of China · Shenzhen Science, Technology and Innovation Commission

References (49)

Show source-provided references
1. 10.1021/cm203216m10.1021/cm203216m ↗
2. 10.1021/acsami.5b0317110.1021/acsami.5b03171 ↗
3. 10.1021/nn201868310.1021/nn2018683 ↗
4. 10.1038/nnano.2010.13210.1038/nnano.2010.132 ↗
5. 10.1021/nn201824h10.1021/nn201824h ↗
6. 10.1021/nn404197510.1021/nn4041975 ↗
7. 10.1021/nn504932e10.1021/nn504932e ↗
8. 10.1038/nnano.2013.8410.1038/nnano.2013.84 ↗
9. 10.1021/acs.nanolett.5b0342210.1021/acs.nanolett.5b03422 ↗
10. 10.1021/nl302152210.1021/nl3021522 ↗
11. 10.1038/srep1637110.1038/srep16371 ↗
12. 10.1021/nn800858w10.1021/nn800858w ↗
13. 10.1039/C5RA17650F10.1039/C5RA17650F ↗
14. 10.1016/j.carbon.2013.02.05110.1016/j.carbon.2013.02.051 ↗
15. 10.1021/acsnano.5b0005310.1021/acsnano.5b00053 ↗
16. 10.1002/adfm.20120264610.1002/adfm.201202646 ↗
17. 10.1021/acs.nanolett.5b0258210.1021/acs.nanolett.5b02582 ↗
18. 10.1039/c2nr31254a10.1039/c2nr31254a ↗
19. 10.1007/s12274-013-0391-x10.1007/s12274-013-0391-x ↗
20. 10.1016/j.orgel.2014.09.04710.1016/j.orgel.2014.09.047 ↗
21. 10.1088/1468-6996/14/3/03500410.1088/1468-6996/14/3/035004 ↗
22. 10.1016/j.carbon.2013.07.03010.1016/j.carbon.2013.07.030 ↗
23. 10.1021/acsnano.5b0462810.1021/acsnano.5b04628 ↗
24. 10.1021/acs.nanolett.5b0153110.1021/acs.nanolett.5b01531 ↗
25. 10.1002/adfm.20130351810.1002/adfm.201303518 ↗
26. 10.1021/am402578d10.1021/am402578d ↗
27. 10.1002/adfm.20120201310.1002/adfm.201202013 ↗
28. 10.1039/C4NR04151H10.1039/C4NR04151H ↗
29. 10.1007/s12274-011-0172-310.1007/s12274-011-0172-3 ↗
30. 10.1038/nmat323810.1038/nmat3238 ↗
31. 10.1021/nn504969z10.1021/nn504969z ↗
32. 10.1021/am507139210.1021/am5071392 ↗
33. 10.1007/s12274-012-0264-810.1007/s12274-012-0264-8 ↗
34. 10.1016/j.compscitech.2016.04.00510.1016/j.compscitech.2016.04.005 ↗
35. 10.1016/j.compscitech.2014.10.00210.1016/j.compscitech.2014.10.002 ↗
36. 10.1016/j.compositesa.2015.03.00310.1016/j.compositesa.2015.03.003 ↗
37. 10.1088/2053-1591/2/1/01500810.1088/2053-1591/2/1/015008 ↗
38. 10.1021/am201494m10.1021/am201494m ↗
39. 10.1021/am300208210.1021/am3002082 ↗
40. 10.1021/am302058610.1021/am3020586 ↗
41. 10.1021/nn101033y10.1021/nn101033y ↗
42. 10.1021/am401124j10.1021/am401124j ↗
43. 10.1016/j.jpor.2012.05.00110.1016/j.jpor.2012.05.001 ↗
44. 10.1021/la301479c10.1021/la301479c ↗
45. 10.1002/adfm.20030442110.1002/adfm.200304421 ↗
46. 10.1016/j.matdes.2014.04.02510.1016/j.matdes.2014.04.025 ↗
47. 10.1364/AO.45.00150710.1364/AO.45.001507 ↗
48. 10.1021/acsami.5b0385510.1021/acsami.5b03855 ↗
49. 10.1021/nl073296g10.1021/nl073296g ↗