Enhanced Field-Emission from SnO₂:WO_{2.72} Nanowire Heterostructures

Deodatta R. Shinde; Padmakar G. Chavan; Shashwati Sen; Dilip S. Joag; Mahendra A. More; S. C. Gadkari; S. K. Gupta

doi:10.1021/am2011977

journal article·2011-12-28

Enhanced Field-Emission from SnO₂:WO_2.72 Nanowire Heterostructures

Deodatta R. Shinde, Padmakar G. Chavan, Shashwati Sen, Dilip S. Joag, Mahendra A. More, S. C. Gadkari, S. K. Gupta

ACS Applied Materials & Interfaces· Volume 3· Issue 12

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Source abstract

Abstract

The field-emission properties of SnO(2):WO(2.72) hierarchical nanowire heterostructure have been investigated. Nanoheterostructure consisting of SnO(2) nanowires as stem and WO(2.72) nanothorns as branches are synthesized in two steps by physical vapor deposition technique. Their field emission properties were recorded. A low turn-on field of ~0.82 V/μm (to draw an emission current density ~10 μA/cm(2)) is achieved along with stable emission for 4 h duration. The emission characteristic shows the SnO(2):WO(2.72) nanoheterostructures are extremely suitable for field-emission applications.

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Research context

Nanomaterials Materials processing

OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007, India

Technical Physics Division, Bhabha Atomic Research Center, Mumbai −400085

References (28)

Show source-provided references

1. Barth S. · Prog. Mater. Sci. · 2010 · 55 · 56310.1016/j.pmatsci.2010.02.001 ↗

2. Comini E. · Prog. Mater. Sci. · 2010 · 55 · 56310.1016/j.pmatsci.2010.02.001 ↗

3. Lao J. U. · Nano Lett. · 2002 · 2 · 128710.1021/nl025753t ↗

4. Bae S. Y. · J. Phys. Chem. B · 2004 · 108 · 1231810.1021/jp048918q ↗

5. Ye C. · Adv. Mater. · 2004 · 16 · 101910.1002/adma.200306509 ↗

6. Hu J. · Adv. Mater. · 2005 · 17 · 97110.1002/adma.200401789 ↗

7. Milliron D. J. · Nature · 2004 · 430 · 19010.1038/nature02695 ↗

8. Baek Y. · Adv. Mater. · 2006 · 18 · 310510.1002/adma.200601021 ↗

9. Zhou J. · Appl. Phys. Lett. · 2005 · 87 · 22310810.1063/1.2136006 ↗

10. Yue S. · Nanotechnology · 2011 · 22 · 11570310.1088/0957-4484/22/11/115703 ↗

11. Late D. J. · Appl. Phys. A: Mater. Sci. Prog. · 2009 · 98 · 75110.1007/s00339-009-5536-0 ↗

12. Bhise A. B. · Appl. Surf. Sci. · 2007 · 253 · 915910.1016/j.apsusc.2007.05.058 ↗

13. Bhise A. B. · J. Exp. Nanosci. · 2010 · 5 · 52710.1080/17458081003671683 ↗

14. Bhise A. B. · J. Cryst. Growth · 2007 · 307 · 8710.1016/j.jcrysgro.2007.06.017 ↗

15. Mathur S. · Small · 2007 · 3 · 207010.1002/smll.200700213 ↗

16. Zhang D. F. · J. Am. Chem. Soc. · 2005 · 127 · 1349210.1021/ja054771k ↗

17. Vomiero A. · Nano Lett. · 2007 · 7 · 355310.1021/nl071339n ↗

18. Sun S. · Cryst. Growth Des. · 2007 · 7 · 198810.1021/cg0701776 ↗

19. Sen S. · Sens. Actuators, B · 2010 · 147 · 45310.1016/j.snb.2010.04.016 ↗

20. Kumar V. · Sens. Actuators, B · 2009 · 138 · 58710.1016/j.snb.2009.02.053 ↗

21. Lin J. · ACS Nano · 2010 · 4 · 58710.1021/nn100194r ↗

22. Gautam U. K. · ACS Nano · 2008 · 2 · 101510.1021/nn800013b ↗

23. Zhou J. · Appl. Phys. Lett. · 2005 · 87 · 22310810.1063/1.2136006 ↗

24. Zhou J. · Adv. Mater. · 2005 · 17 · 210710.1002/adma.200500885 ↗

25. Luo S. H. · Nanotechnology · 2004 · 15 · 142410.1088/0957-4484/15/11/006 ↗

26. 10.1002/pssc.20108416710.1002/pssc.201084167 ↗

27. Furubayashi M. · Micoelectron. Eng. · 2010 · 87 · 159410.1016/j.mee.2009.11.008 ↗

28. Panda S. K. · J. Phys. Chem. C · 2008 · 112 · 624010.1021/jp712083d ↗