Controllable Low-Temperature Chemical Vapor Deposition Growth and Morphology Dependent Field Emission Property of SnO2 Nanocone Arrays with Different Morphologies
Source abstract
Abstract
Vertically aligned SnO2 nanocones with different morphologies have been directly grown on fluorine-doped tin oxide (FTO) glass substrates in a large area by heating a mixture of stannous chloride dihydrate (SnCl2·2H2O) and anhydrous zinc chloride (ZnCl2) at 600 °C in air. Control over the SnO2 nanocone arrays with different morphologies is achieved by adjusting the heat treatment time. The SnO2 nanocones are single crystalline with the tetragonal structure. A single-layer SnO2 nanoparticle film is first formed via the vapor-solid (VS) process due to the decentralization function of ZnCl2 vapor, and the SnO2 nanoparticles served as seeds and grew into nanocone arrays via the VS process. The sharp-tipped nanostructure formation may originate from a concentration gradient of reactant in the growth process. The as-obtained whiskerlike nanocone arrays exhibit enhanced field emission properties in comparison with typical nanoconelike structure arrays and other SnO2 nanostructured materials reported previously, and the turn-on field and field-enhancement factor is 1.19 V/μm and 3110, respectively. The experimental result is consistent with the Utsumi's relative figure of merit for pillar-shaped emitters.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an, 710062, China
i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215125, China
School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, 710049, China
References (55)
Show source-provided references
1. Mathur S. · Small · 2005 · 1 · 71310.1002/smll.200400168 ↗
2. Choe Y. S. · Sens. Actuators, B · 2001 · 77 · 20010.1016/S0925-4005(01)00731-6 ↗
3. Liu R. · ACS Appl. Mater. Interfaces · 2012 · 4 · 153710.1021/am201756m ↗
4. Chen Y. J. · Nanotechnology · 2007 · 18 · 28550210.1088/0957-4484/18/28/285502 ↗
5. Wen Z. H. · Cryst. Growth Des. · 2007 · 7 · 172210.1021/cg060801z ↗
6. Pan Z. W. · Science · 2001 · 291 · 194710.1126/science.1058120 ↗
7. Cheng B. · J. Am. Chem. Soc. · 2004 · 126 · 597210.1021/ja0493244 ↗
8. Li L. J. · Mater. Lett. · 2007 · 61 · 415210.1016/j.matlet.2007.01.044 ↗
9. Shi L. · Langmuir · 2011 · 27 · 397710.1021/la104529h ↗
10. Wang Y. · Chem. Mater. · 2005 · 17 · 389910.1021/cm050724f ↗
11. Ma L. A. · Phys. B · 2008 · 403 · 341010.1016/j.physb.2008.04.044 ↗
12. Li J. J. · Nanotechnology · 2011 · 22 · 50560110.1088/0957-4484/22/50/505601 ↗
13. Kumar S. · Nanotechnology · 2010 · 21 · 32550110.1088/0957-4484/21/32/325501 ↗
14. Duan J. H. · J. Am. Chem. Soc. · 2005 · 127 · 618010.1021/ja042748d ↗
15. Yang R, S. · J. Am. Chem. Soc. · 2006 · 128 · 146610.1021/ja0578000 ↗
16. Wang X. W. · Acta Mater. · 2011 · 59 · 129110.1016/j.actamat.2010.10.061 ↗
17. Mazeina L. · J. Cryst. Growth · 2009 · 311 · 315810.1016/j.jcrysgro.2009.03.025 ↗
18. Chen Y. J. · Appl. Phys. Lett. · 2004 · 85 · 568210.1063/1.1833557 ↗
19. Zhu W. · Mater. Chem. Phys. · 2006 · 99 · 12710.1016/j.matchemphys.2005.10.002 ↗
20. Sun S. H. · Chem.—Eur. J. · 2007 · 13 · 908710.1002/chem.200700448 ↗
21. Liu J. · Cryst. Growth Des. · 2009 · 9 · 175710.1021/cg8007975 ↗
22. Zhang Y. S. · Mater. Lett. · 2006 · 60 · 310910.1016/j.matlet.2006.02.053 ↗
23. Cheng Y. · Nano Lett. · 2008 · 8 · 417910.1021/nl801696b ↗
24. Dattoli E. N. · Nano Lett. · 2007 · 7 · 246310.1021/nl0712217 ↗
25. Law M. · Angew. Chem., Int. Ed. · 2002 · 41 · 240510.1002/1521-3773(20020703)41:13<2405::AID-ANIE2405>3.0.CO;2-3 ↗
26. Wang B. · J. Phys. Chem. C · 2008 · 112 · 664310.1021/jp8003147 ↗
27. Calestani D. · Cryst. Res. Technol. · 2005 · 40 · 93710.1002/crat.200410463 ↗
28. Xue X. Y. · J. Phys. Chem. C · 2010 · 114 · 396810.1021/jp908343r ↗
29. Kolmakov A. · Nano Lett. · 2005 · 5 · 66710.1021/nl050082v ↗
30. Wang G. X. · Sens. Actuators, B · 2008 · 131 · 31310.1016/j.snb.2007.11.032 ↗
31. Wang J. Z. · J. Phys. Chem. C · 2011 · 115 · 1130210.1021/jp203168p ↗
32. Liu J. P. · J. Mater. Chem. · 2009 · 19 · 185910.1039/b817036c ↗
33. Baranauskas V. · Sens. Actuators, B · 2005 · 107 · 47410.1016/j.snb.2004.11.004 ↗
34. He J. H. · Small · 2006 · 2 · 11610.1002/smll.200500210 ↗
35. Wang B. · J. Appl. Phys. · 2005 · 98 · 12430310.1063/1.2142076 ↗
36. Wang Q. Y. · Solid State Commun. · 2007 · 143 · 26010.1016/j.ssc.2007.05.023 ↗
37. Zhang Y. S. · Appl. Surf. Sci. · 2006 · 253 · 79210.1016/j.apsusc.2006.01.009 ↗
38. Renard L. · Nanoscale · 2012 · 4 · 680610.1039/c2nr31883k ↗
39. Ahn H. J. · J. Phys. Chem. B · 2004 · 108 · 981510.1021/jp035769n ↗
40. Ghosh K. · Langmuir · 2010 · 26 · 552710.1021/la9037777 ↗
41. Zheng L. R. · Inorg. Chem. · 2009 · 48 · 181910.1021/ic802293p ↗
42. Yang H. Q. · J. Phys. Chem. C · 2009 · 113 · 2154810.1021/jp905829w ↗
43. Zhang Z. X. · J. Phys. Chem. B · 2006 · 110 · 856610.1021/jp0568632 ↗
44. Ma J. H · Sci. China, Ser. E · 2009 · 52 · 1264
45. Yang H. G. · Angew. Chem., Int. Ed. · 2004 · 43 · 593010.1002/anie.200461129 ↗
46. Pacholski C. · Angew. Chem., Int. Ed. · 2002 · 41 · 118810.1002/1521-3773(20020402)41:7<1188::AID-ANIE1188>3.0.CO;2-5 ↗
47. Li L. · Chem. Phys. Lett. · 2008 · 455 · 9310.1016/j.cplett.2008.02.071 ↗
48. Ma L. A. · Phys. E · 2008 · 40 · 312710.1016/j.physe.2008.04.011 ↗
49. Szuber J. · Sens. Actuators, B · 2000 · 70 · 17710.1016/S0925-4005(00)00564-5 ↗
50. Zhao Q. · Appl. Phys. Lett. · 2005 · 86 · 20311510.1063/1.1931831 ↗
51. Utsumi. T. · IEEE Trans. Electron Devices · 1991 · 38 · 227610.1109/16.88510 ↗
52. Zhang Z. S. · Solid-State Electron. · 2009 · 53 · 57810.1016/j.sse.2009.03.024 ↗
53. Fang X. S. · J. Mater. Chem. · 2008 · 18 · 50910.1039/B712874F ↗
54. Yang F. · ACS Appl. Mater. Interfaces · 2012 · 4 · 385210.1021/am300561w ↗
55. Milne W. I. · J. Mater. Chem. · 2004 · 14 · 93310.1039/b314155c ↗