DataVXACS Applied Materials & InterfacesPaper
journal article·2016-03-02

Aging Precursor Solution in High Humidity Remarkably Promoted Grain Growth in Cu2ZnSnS4 Films

Zhongjie Guan, Wenjun Luo, Yao Xu, Qiuchen Tao, Xin Wen, Zhigang Zou

ACS Applied Materials & Interfaces· Volume 8· Issue 8
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Source abstract

Abstract

Earth-abundant Cu2ZnSnS4 (CZTS) is a promising material for thin film solar cells or solar water splitting cells. Generally, large grain size and vertical penetration are highly desirable microstructures to high-efficiency solar conversion devices. Up to date, some kinds of vacuum methods have been used to prepare large grain-sized CZTS, which are expensive and limit their applications on a large scale. It is still a key challenge to prepare large-grained and vertical-penetration CZTS by a low-cost solution method. In this study, we obtained vertical-penetration CZTS thin film with 1.3 μm grain sizes by a faclie solution method. Different from previous studies, precursor solution was aged in high-humidity air before it was used to prepare CZTS films. The grain size prepared with aging precursor solution was one of the largest among the samples prepared by a solution method after sulfurizing. Moreover, the large-grained CZTS films were used as photocathodes for solar water splitting, which exhibited a much higher photocurrent than those of the samples without aging. To the best of our knowledge, this is the first demonstration to promote grain growth in CZTS by aging precursor solution in high-humidity air. This aging method can offer a reference to prepare other high-performance films.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Engineering and Applied Science, Nanjing University, Nanjing 210093, Peoples’ Republic of China

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, Peoples’ Republic of China

Eco-materials and Renewable Energy Research Center (ERERC), National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, Peoples’ Republic of China

Funding

Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Jiangsu Province · National Natural Science Foundation of China · Key Laboratory for Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications · Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University · Priority Academic Program Development of Jiangsu Higher Education Institutions

References (43)

Show source-provided references
1. 10.1039/C4EE03322A10.1039/C4EE03322A ↗
2. 10.1021/cr100232610.1021/cr1002326 ↗
3. 10.1038/3510460710.1038/35104607 ↗
4. 10.1002/aenm.20130071210.1002/aenm.201300712 ↗
5. 10.1021/nn203230g10.1021/nn203230g ↗
6. 10.1002/aenm.20140084910.1002/aenm.201400849 ↗
7. 10.1002/aenm.20140137210.1002/aenm.201401372 ↗
8. 10.1002/pip.117410.1002/pip.1174 ↗
9. 10.1016/S0927-0248(97)00119-010.1016/S0927-0248(97)00119-0 ↗
10. 10.1002/aenm.20110014010.1002/aenm.201100140 ↗
11. 10.1039/c3ta14096b10.1039/c3ta14096b ↗
12. 10.1021/jacs.5b0901510.1021/jacs.5b09015 ↗
13. 10.1039/C3EE44130J10.1039/C3EE44130J ↗
14. 10.1016/j.solmat.2010.12.01210.1016/j.solmat.2010.12.012 ↗
15. 10.1021/ja406863910.1021/ja4068639 ↗
16. 10.1021/cg501589t10.1021/cg501589t ↗
17. 10.1016/j.solmat.2015.09.06610.1016/j.solmat.2015.09.066 ↗
18. 10.1021/cm500791a10.1021/cm500791a ↗
19. 10.1039/C5TA05813A10.1039/C5TA05813A ↗
20. 10.1063/1.487050810.1063/1.4870508 ↗
21. 10.1016/j.solmat.2011.05.05010.1016/j.solmat.2011.05.050 ↗
22. 10.1039/C5TA02833G10.1039/C5TA02833G ↗
23. 10.1002/pssa.20143114710.1002/pssa.201431147 ↗
24. 10.1039/C3TA13533K10.1039/C3TA13533K ↗
25. 10.1016/S0040-6090(01)01538-310.1016/S0040-6090(01)01538-3 ↗
26. 10.1039/C5TA01259G10.1039/C5TA01259G ↗
27. 10.1039/c3ce42373e10.1039/c3ce42373e ↗
28. 10.1063/1.358761410.1063/1.3587614 ↗
29. 10.1063/1.470419110.1063/1.4704191 ↗
30. 10.1021/ja301373e10.1021/ja301373e ↗
31. 10.1016/j.solmat.2013.01.01510.1016/j.solmat.2013.01.015 ↗
32. 10.1016/j.solmat.2013.06.00810.1016/j.solmat.2013.06.008 ↗
33. 10.1039/c4ra03444a10.1039/c4ra03444a ↗
34. 10.1002/aenm.20130128710.1002/aenm.201301287 ↗
35. 10.1063/1.349928410.1063/1.3499284 ↗
36. 10.1021/ja111713g10.1021/ja111713g ↗
37. 10.1021/cm202379s10.1021/cm202379s ↗
38. 10.1021/cm990005z10.1021/cm990005z ↗
39. 10.1016/j.tsf.2008.11.01910.1016/j.tsf.2008.11.019 ↗
40. 10.1063/1.486625810.1063/1.4866258 ↗
41. 10.1021/ja312653y10.1021/ja312653y ↗
42. 10.1021/am402096r10.1021/am402096r ↗
43. 10.1016/j.ijhydene.2013.09.09410.1016/j.ijhydene.2013.09.094 ↗