journal article·2014-07-23

Comparative Electrochemical Analysis of Crystalline and Amorphous Anodized Iron Oxide Nanotube Layers as Negative Electrode for LIB

Syed Atif Pervez, Doohun Kim, Umer Farooq, Adnan Yaqub, Jung-Hee Choi, You-Jin Lee, Chil-Hoon Doh

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Abstract

This work is a comparative study of the electrochemical performance of crystalline and amorphous anodic iron oxide nanotube layers. These nanotube layers were grown directly on top of an iron current collector with a vertical orientation via a simple one-step synthesis. The crystalline structures were obtained by heat treating the as-prepared (amorphous) iron oxide nanotube layers in ambient air environment. A detailed morphological and compositional characterization of the resultant materials was performed via transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and Raman spectroscopy. The XRD patterns were further analyzed using Rietveld refinements to gain in-depth information on their quantitative phase and crystal structures after heat treatment. The results demonstrated that the crystalline iron oxide nanotube layers exhibit better electrochemical properties than the amorphous iron oxide nanotube layers when evaluated in terms of the areal capacity, rate capability, and cycling performance. Such an improved electrochemical response was attributed to the morphology and three-dimensional framework of the crystalline nanotube layers offering short, multidirectional transport lengths, which favor rapid Li(+) ions diffusivity and electron transport.
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Research context

OpenAlex topics: Anodic Oxide Films and Nanostructures · Advancements in Battery Materials · Electrodeposition and Electroless Coatings

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Korea Electro-technology Research Institute (KERI), Changwon 642-120, Republic of Korea

Electrical Functionality Material Engineering (KERI Campus), Korea University of Science and Technology, Daejeon 305-333, Republic of Korea

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