journal article·2020-07-15

Type-II Interface Band Alignment in the vdW PbI2–MoSe2 Heterostructure

Junting Xiao, Lei Zhang, Hui Zhou, Ziyi Shao, Jinxin Liu, Yuan Zhao, Youzhen Li, Xiaoliang Liu, Haipeng Xie, Yongli Gao, Jia-Tao Sun, Andrew T. S. Wee, Han Huang

ACS Applied Materials & Interfaces· Volume 12· Issue 28
Publisher page

Abstract

Energy band alignments at heterostructure interfaces play key roles in device performance, especially between two-dimensional atomically thin materials. Herein, van der Waals PbI2–MoSe2 heterostructures fabricated by in situ PbI2 deposition on monolayer MoSe2 are comprehensively studied using scanning tunneling microscopy/spectroscopy, atomic force microscopy, photoemission spectroscopy, and Raman and photoluminescence (PL) spectroscopy. PbI2 grows on MoSe2 in a quasi layer-by-layer epitaxial mode. A type-II interface band alignment is proposed between PbI2 and MoSe2 with the conduction band minimum (valence band maximum) located at PbI2 (MoSe2), which is confirmed by first-principles calculations and the existence of interfacial excitons revealed using temperature-dependent PL. Our findings provide a scalable method to fabricate PbI2–MoSe2 heterostructures and new insights into the electronic structures for future device design.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Advanced Thermoelectric Materials and Devices · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China

Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore

Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, United States

School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China

Funding

National Science Foundation · The Fundamental Research Funds for the Central Universities of Central South University

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