journal article·2019-07-17

Phonon–Grain-Boundary-Interaction-Mediated Thermal Transport in Two-Dimensional Polycrystalline MoS2

Changpeng Lin, Xiaobin Chen, Xiaolong Zou

ACS Applied Materials & Interfaces· Volume 11· Issue 28
Publisher page

Abstract

Although dislocations and grain boundaries (GBs) are ubiquitous in large-scale MoS2 samples, their interaction with phonons, which plays an important role in determining the lattice thermal conductivity of polycrystalline MoS2, remains elusive. Here, we perform a systematic study of the heat transport in two-dimensional polycrystalline MoS2 by both molecular dynamics simulation and atomic Green’s function method. Our results indicate that the thermal boundary conductance of GBs of MoS2 is in the range from 6.4 × 108 to 35.3 × 108 W m–2 K–1, which is closely correlated with the overlap between the vibrational density of states of GBs and those of the pristine lattice, as well as the GB energy. It is found that the GBs strongly scatter the phonons with frequency larger than 2 THz, accompanied by a pronounced phonon localization effect and significantly reduced phonon group velocities. Furthermore, by comparing the results from realistic polycrystalline MoS2 to those from different theoretical models, we observe that the Casimir model is broken down and detailed phonon dynamics at a specific GB should be taken into account to accurately describe the phonon transport in polycrystalline materials. Our findings will provide useful guidelines for designing efficient thermoelectric and thermal management materials based on phonon–GB interaction.
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Research context

OpenAlex topics: Thermal properties of materials · Advanced Thermoelectric Materials and Devices · Machine Learning in Materials Science

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, People’s Republic of China

School of Science and State Key Laboratory on Tunable Laser Technology and Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, People’s Republic of China

Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People’s Republic of China

Funding

National Natural Science Foundation of China · Tsinghua-Berkeley Shenzhen Institute · Central Committee of the Communist Party of China · Guangdong Province · Development and Reform Commission of Shenzhen Municipality · Economic, Trade and Information Commission of Shenzhen Municipality

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