Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications
Source abstract
Abstract
The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.
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Research context
OpenAlex topics: Advancements in Photolithography Techniques · Nanofabrication and Lithography Techniques · Integrated Circuits and Semiconductor Failure Analysis
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Affiliations
School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi, Kamand 175 005, Himachal Pradesh, India
Funding
Intel Corporation
References (27)
Show source-provided references
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