journal article·2019-11-20

Energy-Efficient Artificial Synapses Based on Oxide Tunnel Junctions

Jiankun Li, Chen Ge, Haotian Lu, Haizhong Guo, Er-Jia Guo, Meng He, Can Wang, Guozhen Yang, Kuijuan Jin

ACS Applied Materials & Interfaces· Volume 11· Issue 46
Publisher page

Abstract

The development of artificial synapses has enabled the establishment of brain-inspired computing systems, which provides a promising approach for overcoming the inherent limitations of current computer systems. The two-terminal memristors that faithfully mimic the function of biological synapses have intensive prospects in the neural network field. Here, we propose a high-performance artificial synapse based on oxide tunnel junctions with oxygen vacancy migration. Both short-term and long-term plasticities are mimicked in one device. The oxygen vacancy migration through oxide ultrathin films is utilized to manipulate long-term plasticity. Essential synaptic functions, such as paired pulse facilitation, post-tetanic potentiation, as well as spike-timing-dependent plasticity, are successfully implemented in one device by finely modifying the shape of the pre- and postsynaptic spikes. Ultralow femtojoule energy consumption comparable to that of the human brain indicates its potential application in efficient neuromorphic computing. Oxide tunnel junctions proposed in this work provide an alternative approach for realizing energy-efficient brain-like chips.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China

Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign 61820, Illinois, United States

School of Physical Engineering, Zhengzhou University, Zhengzhou, Henan 450001, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

Funding

Ministry of Science and Technology of Thailand · Youth Innovation Promotion Association of the Chinese Academy of Sciences · National Natural Science Foundation of China · Chinese Academy of Sciences

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