Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Semiconductor materials and devices
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Affiliations
Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney 2052, Australia
Centre for Micro-Photonics, Swinburne University of Technology, Melbourne 3122, Australia
Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1/Bau 24, 91058 Erlangen, Germany
Institute of Optics, Information and Photonics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstr. 7/B2, 91058 Erlangen, Germany
Institute of Nanoarchitectures for Energy Conversion, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany
Funding
Deutscher Akademischer Austauschdienst · Deutsche Forschungsgemeinschaft · China Scholarship Council · Australian Renewable Energy Agency · Seventh Framework Programme