pH-Controlled Selective Etching of Al2O3 over ZnO
Source abstract
Abstract
We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.
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Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Thin Film Devices and Materials Research Institute, ‡Department of Electrical Engineering, and §Department of Material Science Engineering, Penn State University, University Park, Pennsylvania 16802, United States
Funding
National Science Foundation · Dow Chemical Company
References (13)
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