Controlling Bandgap of Rippled Hexagonal Boron Nitride Membranes via Plasma Treatment
Source abstract
Abstract
Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ~5.6 eV at 0 s to ~4.25 eV at 250 s, which is a signature of transition from the insulating to the semiconductive regime. It typically required 250 s of plasma treatment to reach the saturation. It illustrates that two-dimensional material with engineered electronic properties can be created by attaching other atoms or molecules.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Boron and Carbon Nanomaterials Research · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Functional Nanomaterials and Department of Physics, University of Puerto Rico, Rio Piedras Campus, P.O. Box 23343, San Juan, PR 00925, Puerto Rico
Materials Science and Technology Division, Oak Ridge National Laboratory, P.O. Box 2008, MS-6087, Oak Ridge, Tennessee 37831, United States
References (32)
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