Voltage-Driven Room-Temperature Resistance and Magnetization Switching in Ceramic TiO2/PAA Nanoporous Composite Films
Source abstract
Abstract
Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO2 thin films were deposited by dc-reactive magnetron sputtering onto ordered porous anodic alumina (PAA) substrates. Voltage-driving room-temperature resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO2/PAA/Al (Ag/TP/Al) device. Further analysis indicates that the formation/rupture of oxygen vacancy defect-based conductive filaments would be responsible for the changes of resistivity and magnetization. Our present results suggest that the TP nanoporous composite film material may therefore be used to achieve voltage control of magnetism and resistance switching in the future multifunctional memory devices. The Ag/TP/Al devices can also be used for new spintronic devices, neuromorphic operations, and alternative logic circuits and computing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · ZnO doping and properties · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center on Nanoenergy Research, College of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, PR China
CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro−Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, PR China
College of Physics Science & Information Engineering and Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024, China
Funding
Natural Science Foundation of Hebei Province
References (41)
Show source-provided references
1. 10.1038/ncomms521510.1038/ncomms5215 ↗
2. 10.1088/1361-6528/aa5a5c10.1088/1361-6528/aa5a5c ↗
3. 10.1038/nmat291310.1038/nmat2913 ↗
4. 10.1063/1.499840110.1063/1.4998401 ↗
5. 10.1039/c7ra00242d10.1039/c7ra00242d ↗
6. 10.1063/1.504307810.1063/1.5043078 ↗
7. 10.1063/1.494560210.1063/1.4945602 ↗
8. 10.1126/science.108660810.1126/science.1086608 ↗
9. 10.1038/nature0731810.1038/nature07318 ↗
10. 10.1103/physrevlett.107.21720210.1103/physrevlett.107.217202 ↗
11. 10.1038/nature1400410.1038/nature14004 ↗
12. 10.1021/nl404464q10.1021/nl404464q ↗
13. 10.1039/c7tc03617e10.1039/c7tc03617e ↗
14. 10.1021/nl402775h10.1021/nl402775h ↗
15. 10.1002/adma.20170335710.1002/adma.201703357 ↗
16. 10.1016/j.sse.2017.02.00710.1016/j.sse.2017.02.007 ↗
17. 10.1021/acsami.7b0292110.1021/acsami.7b02921 ↗
18. 10.1039/c4ra09443c10.1039/c4ra09443c ↗
19. 10.1016/j.jallcom.2015.04.01010.1016/j.jallcom.2015.04.010 ↗
20. 10.1039/c4nr06406b10.1039/c4nr06406b ↗
21. 10.1039/c3cp44451a10.1039/c3cp44451a ↗
22. 10.1186/1556-276x-8-48310.1186/1556-276x-8-483 ↗
23. 10.1016/j.elecom.2017.01.01010.1016/j.elecom.2017.01.010 ↗
24. 10.1016/j.electacta.2016.04.04910.1016/j.electacta.2016.04.049 ↗
25. 10.1016/j.elecom.2017.11.02510.1016/j.elecom.2017.11.025 ↗
26. 10.1016/j.electacta.2013.10.09210.1016/j.electacta.2013.10.092 ↗
27. 10.1016/j.micromeso.2014.01.02410.1016/j.micromeso.2014.01.024 ↗
28. 10.1039/c3tc30462k10.1039/c3tc30462k ↗
29. 10.1063/1.353204310.1063/1.3532043 ↗
30. 10.1016/j.jallcom.2015.07.16410.1016/j.jallcom.2015.07.164 ↗
31. 10.1063/1.292434110.1063/1.2924341 ↗
32. 10.1002/smll.20110179610.1002/smll.201101796 ↗
33. 10.1039/c3cp44451a10.1039/c3cp44451a ↗
34. 10.1038/nnano.2009.45610.1038/nnano.2009.456 ↗
35. 10.1126/science.287.5455.101910.1126/science.287.5455.1019 ↗
36. 10.1063/1.240541510.1063/1.2405415 ↗
37. 10.1063/1.288573010.1063/1.2885730 ↗
38. 10.1038/nmat131010.1038/nmat1310 ↗
39. 10.1088/0022-3727/41/13/13401210.1088/0022-3727/41/13/134012 ↗
40. 10.1021/jp203933810.1021/jp2039338 ↗
41. 10.1021/jacs.6b0694910.1021/jacs.6b06949 ↗