Self-Organized Growth of Two-Dimensional GaTe Nanosheet on ZnO Nanowires for Heterojunctional Water Splitting Applications

Epitaxial two-dimensional GaTe nanosheets on ZnO nanowires were routinely prepared via a two-step chemical vapor deposition procedure. The epitaxial relationship and growth mechanism of the GaTe/ZnO core/shell structures were explored and attributed to a layer-overlayer model. The hybrid structures increased the surface area and the favorable p-n heterojunction enhanced the charge separation for photoelectrochemical performance in water splitting. The above synergistic effects boosted the photocurrent density from −0.3 mA cm –2 for the pristine ZnO nanowires to −2.5 mA cm –2 for the core/shell GaTe/ZnO nanowires at −0.39 V vs RHE under the visible light irradiation. This highlights the promise for utilization of GaTe nanosheet/ZnO nanowires as efficient photoelectrocatalyst for water splitting.