DataVXACS Applied Materials & InterfacesPaper
journal article·2018-12-12Open access

Ultrafast Nanoscale Phase-Change Memory Enabled By Single-Pulse Conditioning

Desmond K. Loke, Jonathan M. Skelton, Tae Hoon Lee, Rong Zhao, Tow-Chong Chong, Stephen R. Elliott

ACS Applied Materials & Interfaces· Volume 10· Issue 49
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Source abstract

Abstract

We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via “initial crystallization” effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 106 cycles for similar “switching-on” voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.
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Research context

Nanomaterials

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Science and Math, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore

Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, United Kingdom

Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom

Department of Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore

Funding

Engineering and Physical Sciences Research Council · Singapore University of Technology and Design · Ministry of Education - Singapore

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