journal article·2019-11-13

Mo Concentration Controls the Morphological Transitions from Dendritic to Semicompact, and to Compact Growth of Monolayer Crystalline MoS2 on Various Substrates

Xiaying Li, Shiping Zhang, Shuai Chen, Xingli Zhang, Junfeng Gao, Yong-Wei Zhang, Jijun Zhao, Xi Shen, Richeng Yu, Yu Yang, Lin He, Jiacai Nie, Changmin Xiong, Ruifen Dou

ACS Applied Materials & Interfaces· Volume 11· Issue 45
Publisher page

Abstract

The domain morphology in the growth of transition-metal dichalcogenides (TMDCs) is mostly triangular but rarely dendritic. Here, we report a robust chemical vapor deposition method to fabricate atomic-thin 2H-phase MoS2 dendrites on several single-crystalline substrates with different lattice structures, such as rutile-TiO2(001), SrTiO3(001), and sapphire(0001). It is found that by tuning the concentration of Mo adatoms, the morphology of MoS2 domains on these substrates evolves from tridentate dendrites at a low Mo concentration to semicompact fractal domains at an intermediate Mo concentration, and to a compact triangular shape at a high Mo concentration. First-principles calculations reveal that the edge diffusion barrier of Mo is comparable to the attachment barrier, inhibiting fast Mo atom diffusion along the edge. Kinetics Monte Carlo simulations with varying Mo concentrations well reproduce the experimental results. Our combined experimental and theoretical analyses evidently show that the growth of MoS2 dendritic domains at a low Mo concentration is a nonequilibrium process, which is dominated by the kinetics of Mo adatoms. Our study presents an effective route to control the morphology of TMDCs by simply tuning the transition-metal adatom concentration.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Beijing Normal University, Beijing 100875, People’s Republic of China

Institute of High Performance Computing, A*STAR, 138632 Singapore

Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China

Beijing National Laboratory for Condensed Mater Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

Institute of Applied Physics & Computational Mathematics, LCP, Beijing 100088, People’s Republic of China

Funding

Ministry of Science and Technology of the People's Republic of China · Dalian University of Technology · National Natural Science Foundation of China · Science and Engineering Research Council · State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University · Central People's Government of the People's Republic of China

References (52)

Show source-provided references
1. 10.1038/366141a010.1038/366141a0 ↗
2. 10.1126/science.276.5311.37710.1126/science.276.5311.377 ↗
3. 10.1038/343523a010.1038/343523a0 ↗
4. 10.1103/PhysRevLett.73.182910.1103/PhysRevLett.73.1829 ↗
5. 10.1103/PhysRevLett.47.140010.1103/PhysRevLett.47.1400 ↗
6. 10.1103/PhysRevA.27.149510.1103/PhysRevA.27.1495 ↗
7. 10.1103/PhysRevB.27.568610.1103/PhysRevB.27.5686 ↗
8. 10.1103/PhysRevLett.67.327910.1103/PhysRevLett.67.3279 ↗
9. Brunce H. · Surf. Sci. Rep. · 1998 · 31 · 121
10. 10.1016/j.pmatsci.2013.04.00310.1016/j.pmatsci.2013.04.003 ↗
11. 10.1021/acsnano.5b0555610.1021/acsnano.5b05556 ↗
12. 10.1146/annurev-matsci-070214-02103410.1146/annurev-matsci-070214-021034 ↗
13. 10.1021/nn400280c10.1021/nn400280c ↗
14. 10.1039/C4CS00256C10.1039/C4CS00256C ↗
15. 10.3390/electronics403065110.3390/electronics4030651 ↗
16. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
17. 10.1021/nn201978y10.1021/nn201978y ↗
18. 10.1021/acs.jpcc.7b0962210.1021/acs.jpcc.7b09622 ↗
19. 10.1021/nl503373x10.1021/nl503373x ↗
20. 10.1002/adfm.20140365910.1002/adfm.201403659 ↗
21. 10.1021/acsnano.5b0128110.1021/acsnano.5b01281 ↗
22. 10.1021/acsnano.5b0800810.1021/acsnano.5b08008 ↗
23. 10.1021/acsami.7b1486110.1021/acsami.7b14861 ↗
24. 10.1021/nn503412w10.1021/nn503412w ↗
25. 10.1021/acsnano.7b0769310.1021/acsnano.7b07693 ↗
26. 10.1088/2053-1583/3/2/02502910.1088/2053-1583/3/2/025029 ↗
27. 10.1038/s41598-017-02919-210.1038/s41598-017-02919-2 ↗
28. 10.1002/adfm.20150557110.1002/adfm.201505571 ↗
29. 10.1021/cm502566210.1021/cm5025662 ↗
30. 10.1088/1361-6528/aa753310.1088/1361-6528/aa7533 ↗
31. 10.1002/adma.20150327010.1002/adma.201503270 ↗
32. 10.1021/cs500070x10.1021/cs500070x ↗
33. 10.1126/science.114148310.1126/science.1141483 ↗
34. 10.1021/nl403620g10.1021/nl403620g ↗
35. 10.1021/jacs.6b0371410.1021/jacs.6b03714 ↗
36. 10.1088/2053-1583/3/3/03500110.1088/2053-1583/3/3/035001 ↗
37. 10.1039/C4CS00256C10.1039/C4CS00256C ↗
38. 10.1039/C4CS00258J10.1039/C4CS00258J ↗
39. 10.1126/science.125056410.1126/science.1250564 ↗
40. 10.1021/acsami.6b0454010.1021/acsami.6b04540 ↗
41. 10.1002/adma.20110479810.1002/adma.201104798 ↗
42. 10.1021/nl400687n10.1021/nl400687n ↗
43. 10.1038/nmat367310.1038/nmat3673 ↗
44. 10.1002/smll.20160354910.1002/smll.201603549 ↗
45. 10.1038/ncomms1220610.1038/ncomms12206 ↗
46. 10.1021/acsnano.5b0791610.1021/acsnano.5b07916 ↗
47. 10.1021/acsnano.6b0170510.1021/acsnano.6b01705 ↗
48. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
49. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
50. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
51. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
52. 10.1063/1.132967210.1063/1.1329672 ↗