journal article·2017-01-25

Robust Interfacial Exchange Bias and Metal–Insulator Transition Influenced by the LaNiO3 Layer Thickness in La0.7Sr0.3MnO3/LaNiO3 Superlattices

Guowei Zhou, Cheng Song, Yuhao Bai, Zhiyong Quan, Fengxian Jiang, Wenqing Liu, Yongbing Xu, Sarnjeet S. Dhesi, Xiaohong Xu

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Abstract

Artificial heterostructures based on LaNiO 3 (LNO) have been widely investigated with the aim to realize the insulating antiferromagnetic state of LNO. In this work, we grew [(La 0.7 Sr 0.3 MnO 3 ) 5 -(LaNiO 3 ) n ] 12 superlattices on (001)-oriented SrTiO 3 substrates by pulsed laser deposition and observed an unexpected exchange bias effect in field-cooled hysteresis loops. Through X-ray absorption spectroscopy and magnetic circular dichroism experiments, we found that the charge transfer at the interfacial Mn and Ni ions can induce a localized magnetic moment. A remarkable increase of exchange bias field and a transition from metal to insulator were simultaneously observed upon decreasing the thickness of the LNO layer, indicating the antiferromagnetic insulator state in 2 unit cells LNO ultrathin layers. The robust exchange bias of 745 Oe in the superlattice is caused by an interfacial localized magnetic moment and an antiferromagnetic state in the ultrathin LNO layer, pinning the ferromagnetic La 0.7 Sr 0.3 MnO 3 layers together. Our results demonstrate that artificial interface engineering is a useful method to realize novel magnetic and transport properties.
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Research context

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Advanced Condensed Matter Physics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, China

Research Institute of Materials Science, Shanxi Normal University, Linfen 041004, China

Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD, U.K.

Department of Electronic Engineering, Royal Holloway, University of London, Egham, Surrey TW20 0EX, U.K.

Harwell Science and Innovation Campus, Diamond Light Source, Didcot, Oxfordshire OX11 0DE, U.K.

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Shanxi Province

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