Ultraviolet Electroluminescence from Randomly Assembled n-SnO2 Nanowiresp-GaN:Mg Heterojunction
Source abstract
Abstract
Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO(2) nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO(2) nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore, Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hum, Kowloon, Hong Kong, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore, Laboratoire de Minéralogie et Cosmochimie, Muséum National d’Histoire Naturelle, CNRS 7202, CP52, 61 Rue Buffon, 75005 Paris, France, and Division of Physics and Applied Physics, School of...
References (15)
Show source-provided references
1. Yu B. L. · Opt. Mater. · 1997 · 7 · 1510.1016/S0925-3467(96)00060-2 ↗
2. Agekyan V. T. · Phys. Status Solidi, A · 1977 · 43 · 1110.1002/pssa.2210430102 ↗
3. Liu R. B. · Physica E · 2007 · 39 · 220
4. Yang H. Y. · Appl. Phys. Lett. · 2009 · 94 · 24112110.1063/1.3157842 ↗
5. Yuan Z. Z. · Appl. Phys. Lett. · 2008 · 92 · 12190810.1063/1.2902299 ↗
6. Yang H. Y. · Appl. Phys. Lett. · 2009 · 95 · 20110410.1063/1.3266523 ↗
7. Mazeina L. · J. Cryst. Growth · 2009 · 311 · 315810.1016/j.jcrysgro.2009.03.025 ↗
8. Dai Z. R. · Adv. Function. Mater. · 2003 · 13 · 910.1002/adfm.200390013 ↗
9. Dong Y. · Appl. Phys. Lett. · 2006 · 89 · 17192010.1063/1.2370519 ↗
10. Park W. I. · Adv. Mater. · 2004 · 16 · 8710.1002/adma.200305729 ↗
11. Grabowski S. P. · Appl. Phys. Lett. · 2001 · 78 · 250310.1063/1.1367275 ↗
12. Ji Z. G. · Opt. Mater. · 2006 · 28 · 41510.1016/j.optmat.2005.03.006 ↗
13. Gowtham S. · J. Phys. Chem. B · 2005 · 109 · 1483610.1021/jp050801u ↗
14. Sze S. M. · 1981
15. Wu M. K. · Photon. Technol. Lett. · 2008 · 20 · 177210.1109/LPT.2008.2004687 ↗