Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers
Source abstract
Abstract
We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Organic Light-Emitting Diodes Research · Molecular Junctions and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical Engineering, Udayana University, Kampus Bukit Jimbaran, Bali, Indonesia
Department of Electrical and Electronics Engineering, Department of Physics, UNAM−Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara, Turkey 06800
South University of Science and Technology of China, Shenzhen, Guangdong, China 518055
References (35)
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