Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device
Source abstract
Abstract
A novel thiadiazoloquinoxaline (TQ)-based donor–acceptor (D–A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (105.8:103.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D–A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D–A tuning.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
Funding
Ministry of Education - Singapore · Foundation for the Author of National Excellent Doctoral Dissertation of the People's Republic of China · Government of Jiangsu Province · China Scholarship Council · National Natural Science Foundation of China
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