Grain-by-Grain Compositional Variations and Interstitial Metals—A New Route toward Achieving High Performance in Half-Heusler Thermoelectrics

High Resolution Image Download MS PowerPoint Slide Half-Heusler alloys based on TiNiSn are promising thermoelectric materials characterized by large power factors and good mechanical and thermal stabilities, but they are limited by large thermal conductivities. A variety of strategies have been used to disrupt their thermal transport, including alloying with heavy, generally expensive, elements and nanostructuring, enabling figures of merit, ZT ≥ 1 at elevated temperatures (>773 K). Here, we demonstrate an alternative strategy that is based around the partial segregation of excess Cu leading to grain-by-grain compositional variations, the formation of extruded Cu “wetting layers” between grains, and—most importantly—the presence of statistically distributed interstitials that reduce the thermal conductivity effectively through point-defect scattering. Our best TiNiCu y Sn ( y ≤ 0.1) compositions have a temperature-averaged ZT device = 0.3–0.4 and estimated leg power outputs of 6–7 W cm –2 in the 323–773 K temperature range. This is a significant development as these materials were prepared using a straightforward processing method, do not contain any toxic, expensive, or scarce elements, and are therefore promising candidates for large-scale production.