A Study on the Growth Behavior and Stability of Molecular Layer Deposited Alucone Films Using Diethylene Glycol and Trimethyl Aluminum Precursors, and the Enhancement of Diffusion Barrier Properties by Atomic Layer Deposited Al2O3 Capping
Abstract
Research context
OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Silicon Nanostructures and Photoluminescence
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Affiliations
Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
Department of Materials Science and Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Yuseong-gu, Daejeon 34141, Republic of Korea
Funding
National Research Foundation of Korea · Ministry of Trade, Industry and Energy · Korea Display Research Corporation