DataVXACS Applied Materials & InterfacesPaper
journal article·2019-03-27

All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer

Yibin Jiang, Le Jiang, Fion Sze Yan Yeung, Ping Xu, Shuming Chen, Hoi-Sing Kwok, Guijun Li

ACS Applied Materials & Interfaces· Volume 11· Issue 12
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Source abstract

Abstract

Here, wide-bandgap magnesium oxide (MgO) is employed as a decorator for the nickel oxide (NiOx) hole transport layer (HTL), by means of a bulk dopant as well as a surface modifier. QLEDs with Ni0.88Mg0.12Ox serving as the HTL achieve an ∼19.5% efficiency improvement compared to devices using pristine NiOx. Further inserting an ultrathin MgO layer between the Ni0.88Mg0.12Ox and QDs to separate the accumulated charges from excitons goes on boosting the peak efficiency by another ∼35%. Finally, a maximum brightness over 40 000 cd/m2 at 10 V is obtained, which is the highest among the reported values.
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Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · ZnO doping and properties · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Lab on Advanced Displays and Optoelectronics, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong

College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P.R. China

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Science and Technology Innovation Commission of Shenzhen Municipality · State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology

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