A Method to Improve Electrical Properties of BiFeO3 Thin Films
Source abstract
Abstract
A method is used to improve the electrical properties of BiFeO(3) thin films by modifying the Bi content in ceramic targets, where all thin films were prepared on SrRuO(3)/Pt/TiO(2)/SiO(2)/Si(100) substrates by radio frequency sputtering. The Bi content in the ceramic target strongly affects the electrical properties of BiFeO(3) thin films. BiFeO(3) thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15 with a molar ratio demonstrate a low leakage current density and a low dielectric loss. Moreover, a larger remanent polarization of 2P(r) ≈ 167.6 μC/cm(2) is also demonstrated for the BiFeO(3) thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15, together with an improved fatigue behavior. Therefore, it is an effective way to improve the electrical properties of bismuth ferrite thin films by modifying the Bi content in ceramic targets.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science, Sichuan University, Chengdu 610064, P. R. China
Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
References (31)
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